Na_(0.5)Bi_(8.5)Ti_(7-x)Mn_(x)O_(27)铋层状陶瓷的结构与电性能研究  

Research on Structure and Properties of Na_(0.5)Bi_(8.5)Ti_(7-x)Mn_(x)O_(27)7 Bismuth Layered Ceramics

作　　者：涂娜 陈超 陈云婧 江向平 TU Na;CHEN Chao;CHEN Yun-jing;JIANG Xiang-ping(School of Material Science and Engineering,Jingdezhen Ceramic University,Jingdezhen 333403,China)

机构地区：[1]景德镇陶瓷大学材料科学与工程学院,景德镇333403

出　　处：《中国陶瓷》2024年第5期21-26,共6页China Ceramics

基　　金：国家自然科学基金(52062018,52162003);江西省杰出青年基金(20212ACB214007);江西省重点研发计划“揭榜挂帅”项目(20223BBE51018);江西省自然科学基金(20212BAB201019)。

摘　　要：采用固相法制备了Na_(0.5)Bi_(8.5)Ti_(7-x)Mn_(x)O_(27)(0≤x≤0.1)共生结构的铋层状陶瓷材料,通过Mn离子调控Na_(0.5)Bi_(8.5)Ti_(7-x)Mn_(x)O_(27)体系中的氧空位迁移和氧空位浓度的变化,研究了氧空位迁移和氧空位浓度对Na_(0.5)Bi_(8.5)Ti_(7-x)Mn_(x)O_(27)陶瓷材料的电性能的影响。研究发现所有样品均为单一的共生铋层状结构,无杂相生成。在掺入Mn的陶瓷样品中,Mn离子占据钙钛矿结构中的Ti离子的位置;在x≤0.06时,氧空位迁移速率降低,氧空位迁移对陶瓷的电学性能影响占主导优势,介电损耗和漏电流减小,压电常数不断增大。随着Mn含量逐渐增加,当x>0.06时,氧空位的浓度对电学性能的影响占主要优势,氧空位浓度不断增大,介电损耗和漏电流增大,压电常数降低。在x=0.06时,压电常数d 33为19.8 pC/N达到最大,此时介电损耗较低,综合电性能最优。Bismuth layered ceramic materials Na_(0.5)Bi_(8.5)Ti_(7-x)Mn_(x)O_(27)(0≤x≤0.1)with inter-growth structure were prepared by the solid-state method.The effects of oxygen vacancy migration and oxygen vacancy concentration on the electrical properties of Na_(0.5)Bi_(8.5)Ti_(7-x)Mn_(x)O_(27)ceramic materials were studied by regulating the migration of oxygen vacancies and the concentration of oxygen vacancies in the Na_(0.5)Bi_(8.5)Ti_(7-x)Mn_(x)O_(27)system through Mn ion doping.The study found that all samples possessed a single inter-growth bismuth layered structure without any phase impurities.In the ceramic samples doped with Mn,Mn ions occupy the position of Ti ions in the perovskite structure.When x≤0.06,the oxygen vacancy migration rate decreases,and the influence of oxygen vacancy migration on the electrical properties of ceramics predominates.As a result,dielectric loss and leakage current decreased,while the piezoelectric constant continuously increased.With the gradual increase in Mn content,when x>0.06,the influence of oxygen vacancy concentration on the electrical properties became the main advantage.Consequently,the oxygen vacancy concentration increased,leading to an increase in dielectric loss and leakage current and a decrease in the piezoelectric constant.The maximum piezoelectric constant d 33 value of 19.8 pC/N was obtained at x=0.06.At this time,the dielectric loss is low and the comprehensive electrical properties are optimal.

关 键 词：Na_(0.5)Bi_(8.5)Ti_(7)O_(27) 氧空位浓度 氧空位迁移 

分 类 号：TQ174.75[化学工程—陶瓷工业]