区熔n型碲化铋材料的制备及性能优化  

Synthesis and Performance Enhancement of Zone-melting N-type Bismuth Telluride Thermoelectric Material

作　　者：田源 汪波[1] 李存成 余健 桑夏晗 赵文俞 TIAN Yuan;WANG Bo;LI Cuncheng;YU Jian;SANG Xiahan;ZHAO Wenyu(School of Material Science and Engineering,Wuhan University of Technology,Wuhan 430070,China;School of Material Science and Engineering,Shandong University of Technology,Zibo 255000,China;School of Material Science and Engineering,Jiujiang University,Jiujiang 332005,China)

机构地区：[1]武汉理工大学材料科学与工程学院,湖北武汉430070 [2]山东理工大学材料科学与工程学院,山东淄博255000 [3]九江学院材料科学与工程学院,江西九江332005

出　　处：《材料科学与工程学报》2024年第2期186-192,212,共8页Journal of Materials Science and Engineering

基　　金：国家重点研发计划资助项目(2018YFB0703603,2019YFA0704903);国家自然科学基金资助项目(11834012,52130203,51902237)。

摘　　要：本研究通过区熔法制备了一系列碘化物(SbI_(3),BiI_(3),TeI_(4))掺杂的n型Bi_(2)Te_(3-x)Se_x材料,发现碘化物掺杂能够有效稳定载流子类型,显著提高材料电导率,降低晶格热导率。当SbI_(3)、BiI_(3)、TeI_(4)掺杂量分别为0.14 wt%、0.12 wt%和0.07 wt%时,材料在405、350和362 K时获得最大ZT值0.85、1.05和0.96,比商用n型材料分别提高了21%,36%和28%。A series of iodide doped(SbI_(3),BiI_(3),TeI_(4))n-type Bi_(2)Te_(3-x)Se_(x) materials was prepared using zone melting methods.It was discovered that iodide doping could stabilize the carrier type,enhance electrical conductivity,and decrease the lattice thermal conductivity.With 0.14 wt%SbI_(3) doping,0.12 wt%BiI_(3) doping,and 0.07 wt%TeI_(4) doping,the maximum ZT values reach 0.85 at 405 K,0.96 at 362 K and 1.05 at 350 K,which are 21%,36%,28%higher than commercial n-type materials,respectively.

关 键 词：n型碲化铋 区熔法 碘化物掺杂 热电性能 

分 类 号：TB34[一般工业技术—材料科学与工程]