掺硼浓度与沉积气压对Ti/BDD微观结构和电化学氧化性能影响规律研究  

Effect of boron concentration and gas pressure on the electrochemical oxidation performance changes of HFCVD diamond films on Ti substrates

作　　者：刘典宏 尹钊 陈峰磊 马莉[2] 李静 魏秋平[1,2] LIU Dianhong;YIN Zhao;CHEN Fenglei;MA Li;LI Jing;WEI Qiuping(School of Materials Science and Engineering,Central South University,Changsha 410083,China;State Key Laboratory of Powder Metallurgy,Central South University,Changsha 410083,China)

机构地区：[1]中南大学材料科学与工程学院,长沙410083 [2]中南大学粉末冶金国家重点实验室,长沙410083

出　　处：《金刚石与磨料磨具工程》2024年第2期151-160,共10页Diamond & Abrasives Engineering

基　　金：国家“十四五”重点研究发展计划(2021YFB3701800);国家自然科学基金(52071345,51874370,51601226);广东省“十三五”重点研究开发项目(2020B01085001);湖南省高新技术产业科技创新引领计划(2022GK4037,2022GK4047)。

摘　　要：探究在热丝化学气相沉积生长硼掺杂金刚石的过程中,掺硼浓度与沉积气压对钛基硼掺杂金刚石薄膜的微观结构与电化学氧化性能的影响,并以四环素作为模拟污染物进行电化学氧化降解实验。使用扫描电子显微镜、拉曼光谱、紫外分光光度计以及电化学工作站对电极表面形貌、成分以及电化学性能进行表征。结果表明:随着掺硼浓度与沉积气压的增大,金刚石薄膜表面晶粒明显细化,生长速率下降;然而随着沉积气压的升高,金刚石的晶粒质量逐渐降低,但硼原子掺杂则会提高金刚石晶粒质量;在高掺硼浓度和低沉积气压的条件下,金刚石薄膜表面的硼原子浓度更高;高掺硼浓度和低沉积气压下所生成的较大晶粒尺寸和更高硼原子浓度的硼掺杂金刚石电极具有更优越的电化学性能、更高的降解效率以及更低的降解能耗。The effects of boron concentration and deposition pressure on the microstructure and electrochemical oxidation performance of Ti/BDD electrodes during HFCVD growth were systematically investigated.The electrode's surface morphology,composition,and electrochemical performance were characterized by scanning electron microscope(SEM),Raman spectroscopy,ultraviolet spectrophotometry,and an electrochemical workstation.Tetracycline served as a simulated pollutant to evaluate the electrochemical oxidation degradation performance of BDD electrodes fabricated with different boron concentrations and deposition pressures.As air pressure increases,the grain quality of the diamond gradually decreases,yet boron atom doping enhances the grain quality of the diamond.Under high boron concentration and low pressure conditions,the boron atom concentration on the diamond film's surface is elevated.BDD electrodes with larger grain sizes and higher boron atom concentrations,prepared under these conditions,exhibit superior electrochemical performance,increased degradation efficiency,and reduced degradation energy consumption.

关 键 词：钛基硼掺杂金刚石薄膜电极 电化学氧化 掺硼浓度 沉积气压 四环素 

分 类 号：TG74[金属学及工艺—刀具与模具]