High-brightness green InP-based QLEDs enabled by in-situ passivating core surface with zinc myristate  

作　　者：Yuanbin Cheng Qian Li Mengyuan Chen Fei Chen Zhenghui Wu Huaibin Shen 

机构地区：[1]Key Laboratory for Special Functional Materials of Ministry of Education,National&Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology,Henan University,Kaifeng 475004,People’s Republic of China

出　　处：《Materials Futures》2024年第2期141-148,共8页材料展望（英文）

基　　金：the National Natural Science Foundation of China(Grant Nos.62204078 and U22A2072);the Natural Science Foundation of Henan Province for Excellent Youth Scholar(Grant No.232300421092).

摘　　要：The performance of red InP and blue ZnTeSe-based quantum dots(QDs)and corresponding QD light emitting diodes(QLEDs)has already been improved significantly,whose external quantum efficiencies(EQEs)and luminances have exceeded 20%and 80000 cd m-2,respectively.However,the inferior performance of the green InP-based device hinders the commercialization of full-color Cd-free QLED technology.The ease of oxidation of the highly reactive InP cores leads to high non-radiative recombination and poor photoluminescence quantum yield(PL QY)of the InP-based core/shell QDs,limiting the performance of the relevant QLEDs.Here,we proposed a fluoride-free synthesis strategy to in-situ passivate the InP cores,in which zinc myristate reacted with phosphine dangling bonds to form Zn–P protective layer and protect InP cores from the water and oxygen in the environment.The resultant InP/ZnSe/ZnS core/shell QDs demonstrated a high PL QY of 91%.The corresponding green-emitting electroluminescence devices exhibited a maximum EQE of 12.74%,along with a luminance of over 175000 cd m^(-2)and a long T50@100 cd m^(-2)lifetime of over 20000 h.

关 键 词：quantum-dot light emitting diodes InP-based quantum dot in-situ passivation of core surface zinc myristate 

分 类 号：TN312.8[电子电信—物理电子学]