Flexible UV detectors based on in-situ hydrogen doped amorphous Ga_(2)O_(3) with high photo-to-dark current ratio  

作　　者：Yanxin Sui Huili Liang Wenxing Huo Xiaozhi Zhan Tao Zhu Zengxia Mei 

机构地区：[1]Songshan Lake Materials Laboratory,Dongguan,Guangdong 523808,People’s Republic of China [2]Institute of Physics,Chinese Academy of Sciences,Beijing 100190,People’s Republic of China [3]Department of Biomedical Engineering,Tianjin University,92 Weijin Road,Tianjin 300072,People’s Republic of China [4]China Spallation Neutron Source,Dongguan,Guangdong 523803,People’s Republic of China

出　　处：《Materials Futures》2024年第1期181-189,共9页材料展望（英文）

基　　金：supported by Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2022A1515110607 and 2019B1515120057);the National Natural Science Foundation of China(Grant Nos.62174113,12174275,61874139,61904201 and 11875088).

摘　　要：Amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))has been attracting more and more attention due to its unique merits such as wide bandgap(∼4.9 eV),low growth temperature,large-scale uniformity,low cost and energy efficient,making it a powerful competitor in flexible deep ultraviolet(UV)photodetection.Although the responsivity of the ever-reported a-Ga_(2)O_(3)UV photodetectors(PDs)is usually in the level of hundreds of A/W,it is often accompanied by a large dark current due to the presence of abundant oxygen vacancy(VO)defects,which severely limits the possibility to detect weak signals and achieve versatile applications.In this work,the VO defects in a-Ga_(2)O_(3)thin films are successfully passivated by in-situ hydrogen doping during the magnetron sputtering process.As a result,the dark current of a-Ga_(2)O_(3)UV PD is remarkably suppressed to 5.17×10^(-11) A at a bias of 5 V.Importantly,the photocurrent of the corresponding device is still as high as 1.37×10^(-3)A,leading to a high photo-to-dark current ratio of 2.65×107 and the capability to detect the UV light with the intensity below 10 nW cm^(-2).Moreover,the H-doped a-Ga_(2)O_(3)thin films have also been deposited on polyethylene naphtholate substrates to construct flexible UV PDs,which exhibit no great degradation in bending states and fatigue tests.These results demonstrate that hydrogen doping can effectively improve the performance of a-Ga_(2)O_(3)UV PDs,further promoting its practical application in various areas.

关 键 词：Ga_(2)O_(3) hydrogen doping ultraviolet photodetector photo-to-dark current ratio neutron reflection 

分 类 号：TN23[电子电信—物理电子学]