Out-of-plane photoconductive and bulk photovoltaic effects in two-dimensionalα-In_(2)Se_(3)/Ta_(2)NiS_(5) ferroelectric heterojunctions  

作　　者：Dan Qiu Jianing He Shiwen Tan Pengfei Hou 

机构地区：[1]School of Materials Science and Engineering,Xiangtan University Hunan,Xiangtan 411105,P.R.China

出　　处：《Journal of Advanced Dielectrics》2023年第6期1-6,共6页先进电介质学报（英文）

基　　金：supported by the National Natural Science Foundation of China(No.12175191);Natural Science Foundation of Hunan Province,China(Nos.2022JJ30566);the Research Foundation of Education Bureau of Hunan Province,China(Grant No.22A0134).

摘　　要：Two-dimensionalα-In_(2)Se_(3)exhibits simultaneous intercorrelated in-plane and out-of-plane polarization,making it a highly promising material for use in memories,synapses,sensors,detectors,and optoelectronic devices.With its narrow bandgap,α-In_(2)Se_(3)is particularly attractive for applications in photodetection.However,relatively little research has been conducted on the out-of-plane photoconductive and bulk photovoltaic effects inα-In_(2)Se_(3).This limits the potential ofα-In_(2)Se_(3)in the device innovation and performance modification.Herein,we have developed anα-In_(2)Se_(3)-based heterojunction with a transparent electrode of two-dimensional Ta_(2)NiS_(5).The out-of-plane electric field can effectively separate the photo-generated electron-hole pairs in the heterojunction,resulting in an out-of-plane responsivity(R),external quantum efficiency(EQE),and specific detectivity(D*)of 0.78 mA/W,10−3%and 1.14×10^(8)Jones,respectively.The out-of-plane bulk photovoltaic effect has been demonstrated by changes in the short circuit current(SCC)and open circuit voltage(V_(oc))with different optical power intensity and temperature,which indicates thatα-In_(2)Se_(3)-based heterojunctions has application potential in mid-far infrared light detection based on its out-of-plane photoconductive and bulk photovoltaic effects.Although the out-of-plane photoconductive and bulk photovoltaic effects are relatively lower than that of traditional materials,the findings pave the way for a better understanding of the out-of-plane characteristics of two-dimensionalα-In_(2)Se_(3)and related heterojunctions.Furthermore,the results highlight the application potential ofα-In_(2)Se_(3)in low-power device innovation and performance modification.

关 键 词：Photoconductive effect bulk photovoltaic effect FERROELECTRIC heterojunction 

分 类 号：O48[理学—固体物理]