Correction:Efficiency improvement by using metal–insulator‑semiconductor structure in InGaN/GaN micro‑light‑emitting diodes  

作　　者：Jian Yin David Hwang Hossein Zamani Siboni Ehsanollah Fathi Reza Chaji Dayan Ban 

机构地区：[1]Department of Electrical and Computer Engineering,Waterloo Institute Nanotechnology,University of Waterloo,Waterloo,ON N2L 3G1,Canada [2]Vuereal InC,440 Philip Street,Unit 100,Waterloo,ON N2L 5R9,Canada

出　　处：《Frontiers of Optoelectronics》2024年第1期95-99,共5页光电子前沿（英文版）

摘　　要：Open Access This article is licensed under a Creative Commons Attribution 4.0 International License,which permits use,sharing,adaptation,distribution and reproduction in any medium or format,as long as you give appropriate credit to the original author(s)and the source,provide a link to the Creative Commons licence,and indicate if changes were made.The images or other third party material in this article are included in the article’s Creative Commons licence.

关 键 词：Efficiency DIODES CREATIVE 

分 类 号：TN312.8[电子电信—物理电子学] G23[文化科学]