Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions  

作　　者：Xiulian Fan Ruifeng Xin Li Li Bo Zhang Cheng Li Xilong Zhou Huanzhi Chen Hongyan Zhang Fangping OuYang Yu Zhou 

机构地区：[1]School of Physics and Electronics,Hunan Key Laboratory of Nanophotonics and Devices,Central South University,Changsha 410083,China [2]Jincheng Research Institute of Opto-mechatronics Industry,Jincheng 048000,China [3]Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems,Jincheng 048000,China [4]School of Physical Science and Technology,Xinjiang University,Urumqi 830046,China [5]State Key Laboratory of Powder Metallurgy,Central South University,Changsha 410083,China

出　　处：《Frontiers of physics》2024年第2期105-130,共26页物理学前沿（英文版）

基　　金：supported by the Science and Technology Innovation Program of Hunan Province(“HuXiang Young Talents”,Grant No.2021RC3021),the Natural Science Foundation of Hunan Province,China(Grant No.2021JJ40780);the National Natural Science Foundation of China(Grant No.51902346);supported by the Open Project Program of Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems(Grant No.2023SZKF14).

摘　　要：Two-dimensional transition metal dichalcogenides(TMDs)exhibit promising application prospects in the domains of electronic devices,optoelectronic devices and spintronic devices due to their distinctive energy band structures and spin−orbit coupling properties.Cr-based chalcogenides with narrow or even zero bandgap,covering from semiconductors to metallic materials,have considerable potential for wide-band photodetection and two-dimensional magnetism.Currently,the preparation of 2D CrX_(n)(X=S,Se,Te)nanosheets primarily relies on chemical vapor deposition(CVD)and molecule beam epitaxy(MBE),which enable the production of high-quality large-area materials.This review article focuses on recent progress of 2D Cr-based chalcogenides,including unique crystal structure of the CrX_(n)system,phase-controlled synthesis,and heterojunction construction.Furthermore,a detailed introduction of room-temperature ferromagnetism and electrical/optoelectronic properties of 2D CrXn is presented.Ultimately,this paper summarizes the challenges associated with utilizing 2D Cr-based chalcogenides in preparation strategies,optoelectronics devices,and spintronic devices while providing further insights.

关 键 词：physical properties two-dimensional materials Cr-based chalcogenide controlled synthesis heterojunction eletronic and optoelectronic devices 

分 类 号：TB30[一般工业技术—材料科学与工程]