氧化限制型795 nm垂直腔面发射激光器  

Oxidation-Limited 795 nm Vertical Cavity Surface Emission Laser

作　　者：聂语葳 李伟[1] 吕家纲 潘智鹏 刘素平[1] 马骁宇[1] Nie Yuwei;Li Wei;Jiagang Lü;Pan Zhipeng;Liu Suping;Ma Xiaoyu(National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Optoelectronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所光电子器件国家工程研究中心,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《中国激光》2024年第6期20-29,共10页Chinese Journal of Lasers

基　　金：国家自然科学基金(62174154)。

摘　　要：单模795 nm垂直腔面发射激光器作为铷原子钟的激光光源,一般采用氧化限制结构获得单模输出。对垂直腔面发射激光器外延结构以及氧化限制孔径进行了优化设计。基于有限元分析方法,利用光纤波导理论和热电耦合模型,对氧化孔径的光学和电学限制进行了模拟,计算分析了实现单模和良好热电特性所需的氧化孔径大小。实验制备了具有不同氧化孔径的器件,并进行了功率-电流以及光谱特性测试。当氧化孔径为1.9μm时,在3~7 mA注入电流下器件始终保持单模输出,边模抑制比大于35 dB;器件保持单模输出的最大氧化孔径为3.8μm,室温下阈值电流为1 mA,最大饱和输出功率为2 mW,斜率效率为0.3 W/A,3 mA注入电流下的出射波长为790 nm,边模抑制比大于30 dB。制备的室温下单模特性良好的790 nm垂直腔面发射激光器,为实现高温下795 nm偏振稳定单模输出提供了可能。Objective The vertical cavity surface-emitting laser(VCSEL)is a type of semiconductor laser that emits light perpendicular to the substrate surface.The VCSEL,as a chip-level atomic clock light source,must possess good single-mode characteristics.Thus the individual frequency required by the atomic clock can be precisely modulated to stimulate the atomic clock s operation,and the atomic clock is ensured not to absorb other signals during the modulation process.The practical design necessitates confining the electric and optical fields of the VCSEL to secure strong single-mode characteristics,while also optimizing the epitaxial structure of the device.This study aims to develop a 795 nm VCSEL device with excellent power characteristics,capable of functioning at high temperatures up to 380 K,and achieving a fundamental mode output in the desired wavelength range.Methods First,the quantum well structure is designed using strain-compensated quantum well band theory and the Kronig-Penney model to determine the material composition and thickness parameters of the quantum well.This ensures that the quantum well material exhibits high gain,with a peak wavelength of 795 nm at the high temperature of 380 K.Next,the distributed Bragg reflector(DBR)is designed using the transfer matrix theory to determine the material compositions of the high and low refractive index layers.The logarithm of the power reflectance for the P-type DBR and N-type DBR is calculated.Following this,the oxide confinement layer is analyzed using the fiber waveguide theory and a thermoelectric coupling model to achieve good single-mode characteristics and thermal properties of the VCSEL.The oxide aperture for the VCSEL in the fundamental mode lasing is calculated.After simulating and calculating the parameters,the devices are fabricated.Different-sized mesa structures are designed in various regions of the layout,and four VCSEL devices with different oxide apertures are fabricated on a single chip.A comparative analysis is performed on these devices to

关 键 词：激光器 垂直腔面发射激光器 铷原子钟 单模 氧化限制层 

分 类 号：TN242[电子电信—物理电子学]