1967~2033 nm波段硅基可调谐外腔半导体激光器设计与仿真  

Design and Simulation of Silicon⁃Based Tunable External Cavity Diode Lasers in the 1967-2033 nm Wavelength Range

作　　者：万浩然 杨禹霖 乔忠良 李翔 Jia Xu Brian Sia 余文军 翁登群 李再金 李林 陈浩 赵志斌 薄报学 高欣 曲轶 刘重阳 汪宏 张宇[4] 牛智川[4] Wan Haoran;Yang Yulin;Qiao Zhongliang;Li Xiang;Jia Xu Brian Sia;Yu Wenjun;Weng Dengqun;Li Zaijin;Li Lin;Chen Hao;Zhao Zhibin;Bo Baoxue;Gao Xin;Qu Yi;Liu Chongyang;Wang Hong;Zhang Yu;Niu Zhichuan(Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province,School of Physics and Electronic Engineering,Hainan Normal University,Hainan International Joint Research Center for Semiconductor Lasers,Haikou 571158,Hainan,China;School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore 639798,Singapore;Temasek Laboratories@NTU(TL@NTU),Nanyang Technological University,Singapore 637553,Singapore;State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;National Key Laboratory on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,Jilin,China)

机构地区：[1]海南师范大学物理与电子工程学院海南省激光技术与光电子功能材料重点实验室,半导体激光海南省国际联合研究中心,海南海口571158 [2]新加坡南洋理工大学电气与电子工程学院,新加坡639798 [3]新加坡南洋理工大学淡马锡实验室,新加坡637553 [4]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083 [5]长春理工大学高功率半导体激光器国家重点实验室,吉林长春130022

出　　处：《中国激光》2024年第6期74-83,共10页Chinese Journal of Lasers

基　　金：国家自然科学基金(62274048,62174046,61964007,62064004,61864002);海南省重点研发项目(ZDYF2020036,ZDYF2020020,ZDYF2020217);海南省自然科学基金(622RC671,120MS031,2019RC190);海南省重大科技计划项目(ZD⁃KJ2019005);海南省院士创新平台专项(YSPTZX202034,YSPTZX202127);海南省高等学校科学研究项目(Hnky2020-24,Hnjg2021ZD-22,Hnjg2022ZD-18)。

摘　　要：2μm波长附近可调谐半导体激光器在分子光谱学和光通信领域中有广阔的应用前景。基于绝缘体上硅(SOI)平台,对2μm波长附近可调谐半导体激光器的外腔部分进行了设计优化。分析了不同尺寸光波导的模式损耗特性、单个微环谐振腔受总线波导耦合间距的作用以及总线波导光反馈终端对外腔半导体激光器性能的影响。并提出了一种具有高工艺兼容度的多模环形光波导光反馈结构。所设计的可调谐半导体激光器硅基外腔可通过环形波导上的镍铬合金微加热器进行0.1 nm/K的高精度调谐,对单个微加热器施加3.2 V电压时,调谐范围可达66 nm(1967~2033 nm)。Objective The tunable laser near the 2μm wavelength has attracted significant attention due to its importance in gas detection and potential as a core component in high-capacity optical communication technologies.The scheme based on the integration of a silicon photonic chip with a III-V gain chip is gaining popularity in the research field of external cavity tunable lasers owing to its narrow linewidth and wide tuning range.While previous studies have primarily explored the~1.55μm wavelength range,limited research has been conducted on~2μm wavelength external cavity semiconductor lasers(ECDLs).In addition,in the fields of spatial signal transmission and gas detection,ECDLs must meet higher requirements for the output power,side mode suppression ratio(SMSR),and stability.Therefore,further optimization of the external cavity of the~2μm tunable laser is needed.Methods Based on the 220 nm silicon-on-insulator(SOI)platform,we first used the Lumerical mode to simulate and analyze the mode loss characteristics of optical waveguides with different cross-sectional sizes and bending radii.We then studied the impact of the microring resonator Ggapmrr on the performance of a vernier filter(including the Q value,side mode suppression ratio,linewidth,and transmission loss).In addition,we analyzed the effect of waveguide termination reflectivity on the stability of the external cavity of a tunable laser and proposed waveguide termination based on the scattering and bending loss characteristics of multimode waveguides to terminate stray light in the waveguide.Finally,a thermal conduction analysis of the vernier filter was performed using Lumerical device,and the thermal analysis data were imported into Lumerical interconnect to study the thermal tuning performance of the tunable laser external cavity.Results Based on the above methodology,Si waveguide widths ranging from 0.28μm to 0.63μm facilitate quasi-single-mode transmission within the 1.95‒2.05μm wavelength range(Fig.2).Investigations of various Si waveguide thick

关 键 词：硅光集成 可调谐外腔半导体激光器 环形谐振腔 光波导终端 

分 类 号：TN256[电子电信—物理电子学] TN252TN248