高精度可编程限流二极管功率通路设计  

Design of diode power path with high precision programmable current limit

作　　者：李现坤 魏廷存[1] 陈彦杰 陈楠[1] LI Xiankun;WEI Tingcun;CHEN Yanjie;CHEN Nan(College of Microelectronics,Northwestern Polytechnical University,Xi’an 710072,China;China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214072,Jiangsu China)

机构地区：[1]西北工业大学微电子学院,陕西西安710072 [2]中国电子科技集团公司第五十八研究所,江苏无锡214072

出　　处：《华中科技大学学报（自然科学版）》2024年第3期72-77,共6页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：陕西省自然科学基础研究计划资助项目(2021JM-064);江苏省自然科学基金青年基金资助项目(BK20200167)。

摘　　要：为了解决传统功率通路中肖特基二极管导通损耗较大的问题,设计了一款高精度可编程限流双通道理想二极管功率通路,基于0.18μm BiCMOS工艺进行了流片验证.采用了新颖的自适应电源选通控制电路,避免PMOS功率管的寄生体二极管导通的风险,并使PMOS功率管导通阻抗仅为40 mΩ.芯片实测结果表明:单个理想二极管功率通路在4 A电流条件下,-40°~125°温度范围内传输效率达到92%以上;而且电路内部集成了高精度可编程限流保护电路,单个通道实现了0.15~4 A范围内限流阈值调节.In order to address the substantial conduction losses associated with Schottky diodes in conventional power path,a highprecision,programmable current-limiting dual-channel“ideal”diode power circuit was designed,and chip verification was carried out based on 0.18μm BiCMOS technology.A novel adaptive power source selection control circuit was employed to mitigate the risk of parasitic diode conduction in PMOS power transistors,reducing the conduction impedance of the designed PMOS power transistor to a mere 40 mΩ.Experimental results from the chip indicate that,under a 4 A current,the transmission efficiency of a single ideal diode power path exceeds 92%across a temperature range from-40℃to 125℃.Moreover,the circuit internally integrates a high-precision programmable current-limiting protection circuit,allowing for individual channel current-limiting threshold adjustment within the range from 0.15 A to 4 A.

关 键 词：理想二极管 线性调节控制 迟滞开/关控制 可编程限流 

分 类 号：TN433[电子电信—微电子学与固体电子学]