一种基于T型单元的混合器件四电平变换器  

A Hybrid Four Level Converter Based on T-type Unit

作　　者：韩如磊 董家展 王超 李楚杉 HAN Ru-lei;DONG Jia-zhan;WANG Chao;LI Chu-shan(Inner Mongolia Power(Group)Co.,Ltd.,Hohhot 010020,China;不详)

机构地区：[1]内蒙古电力(集团)有限责任公司,内蒙古自治区电力系统智能化电网仿真企业重点实验室,内蒙古呼和浩特010020 [2]浙江大学,浙江大学伊利诺伊大学厄巴纳香槟校区联合学院,浙江海宁3314400

出　　处：《电力电子技术》2024年第4期126-129,共4页Power Electronics

基　　金：内蒙古电力(集团)有限责任公司科技项目(2023-3-1)。

摘　　要：在变换器中应用以碳化硅(SiC)为代表的宽禁带半导体器件能够显著提升变换器的效率和功率密度,但同时带来半导体成本的大幅提升。基于SiC和硅(Si)分立器件的混合多电平技术在不显著提升半导体成本的情况下能够实现与全SiC设计相近的性能,是一种兼顾成本与性能的优化设计。然而,目前针对混合多电平变换器的研究大多基于三电平结构。此处提出了一种高频单元采用T型拓扑的SiC和Si器件混合型四电平变换器拓扑,低频单元使用低成本的Si器件,能够保持相对较低的成本。同时,提出了一种所有的高频开关动作都由SiC器件承担的混频调制策略,并且能够兼容对母线电容电压的主动控制。最后,通过实验验证了所提电路拓扑与调制策略的有效性。The application of wide bandgap semiconductor devices represented by silicon carbide(SiC)in converters can significantly improve the efficiency and power density,but at the same time,it brings a significant increase in semiconductor costs.The hybrid multi-level technology based on SiC and silicon(Si)devices can achieve performance similar to that of full SiC designs without exponentially increasing semiconductor costs.It is an optimized design that optimizes cost and performance.However,current research on hybrid multilevel converters is mostly based on three-level structures.A hybrid four level converter topology of SiC and Si devices is proposed by using a T-type topology for high-frequency units.Low frequency units use low-cost Si devices which can maintain relatively low costs.At the same time,a mixed frequency modulation strategy is proposed that all high-frequency switching actions are undertaken by SiC devices and can be compatible with active control of bus capacitor voltage.Finally,the effectiveness of the proposed circuit topology and modulation strategy Is verified through the experiments.

关 键 词：多电平变换器 混频调制 高频开关动作 

分 类 号：TM46[电气工程—电器]