Spin logic devices based on negative differential resistance -enhanced anomalous Hall effect  

作　　者：Hongming Mou Ziyao Lu Yuchen Pu Zhaochu Luo Xiaozhong Zhang 

机构地区：[1]Key Laboratory of Advanced Materials(MOE),School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China [2]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China

出　　处：《International Journal of Minerals,Metallurgy and Materials》2024年第6期1437-1448,共12页矿物冶金与材料学报（英文版）

基　　金：sponsored by the National Key Research and Development Program of China(Nos.2017YFA0206202 and 2022YFA1203904);the National Natural Science Foundation of China(No.52271160).

摘　　要：Owing to rapid developments in spintronics,spin-based logic devices have emerged as promising tools for next-generation computing technologies.This paper provides a comprehensive review of recent advancements in spin logic devices,particularly focusing on fundamental device concepts rooted in nanomagnets,magnetoresistive random access memory,spin–orbit torques,electric-field modu-lation,and magnetic domain walls.The operation principles of these devices are comprehensively analyzed,and recent progress in spin logic devices based on negative differential resistance-enhanced anomalous Hall effect is summarized.These devices exhibit reconfigur-able logic capabilities and integrate nonvolatile data storage and computing functionalities.For current-driven spin logic devices,negative differential resistance elements are employed to nonlinearly enhance anomalous Hall effect signals from magnetic bits,enabling reconfig-urable Boolean logic operations.Besides,voltage-driven spin logic devices employ another type of negative differential resistance ele-ment to achieve logic functionalities with excellent cascading ability.By cascading several elementary logic gates,the logic circuit of a full adder can be obtained,and the potential of voltage-driven spin logic devices for implementing complex logic functions can be veri-fied.This review contributes to the understanding of the evolving landscape of spin logic devices and underscores the promising pro-spects they offer for the future of emerging computing schemes.

关 键 词：spin logic spin–orbit torque negative differential resistance full-adder 

分 类 号：TN03[电子电信—物理电子学]