In-situ fabrication of on-chip 1T'-MoTe_(2)/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing  

作　　者：Menglei Zhu Kunxuan Liu Di Wu Yunrui Jiang Xue Li Pei Lin Zhifeng Shi Xinjian Li Ran Ding Yalun Tang Xuechao Yu Longhui Zeng 

机构地区：[1]School of Physics and Microelectronics,and Key Laboratory of Material Physics,Zhengzhou University,Zhengzhou 450052,China [2]Department of Electrical and Computer Engineering,University of California San Diego,La Jolla,CA 92093,USA [3]State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China [4]Key Laboratory of Multifunctional Nanomaterials and Smart Systems,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Nano Research》2024年第6期5587-5594,共8页纳米研究（英文版）

基　　金：the National Natural Science Foundation of China(Nos.U22A20138,62374149,and 62375279);the Collaborative Innovation Center of Suzhou Nano Science&Technology.The authors are grateful for the technical support from the Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(SINANO).

摘　　要：High-sensitivity room-temperature multi-dimensional infrared(IR)detection is crucial for military and civilian purposes.Recently,the gapless electronic structures and unique optoelectrical properties have made the two-dimensional(2D)topological semimetals promising candidates for the realization of multifunctional optoelectronic devices.Here,we demonstrated the in-situ construction of high-performance 1T’-MoTe_(2)/Ge Schottky junction device by inserting an ultrathin AlOx passivation layer.The good detection performance with an ultra-broadband detection wavelength range of up to 10.6 micron,an ultrafast response time of~160 ns,and a large specific detectivity of over 109 Jones in mid-infrared(MIR)range surpasses that of most 2D materials-based IR sensors,approaching the performance of commercial IR photodiodes.The on-chip integrated device arrays with 64 functional detectors feature high-resolution imaging capability at room temperature.All these outstanding detection features have enabled the demonstration of position-sensitive detection applications.It demonstrates an exceptional position sensitivity of 14.9 mV/mm,an outstanding nonlinearity of 6.44%,and commendable trajectory tracking and optoelectronic demodulation capabilities.This study not only offers a promising route towards room-temperature MIR optoelectronic applications,but also demonstrates a great potential for application in optical sensing systems.

关 键 词：MoTe_(2) broadband photodetection Schottky junction IMAGING position sensitive detector 

分 类 号：TN15[电子电信—物理电子学]