Quantum Anomalous Hall Effect with Tunable Chern Numbers in High-Temperature 1T-PrN_(2) Monolayer  

作　　者：吴绪才 李树宗 司君山 黄博 张卫兵 Xu-Cai Wu;Shu-Zong Li;Jun-Shan Si;Bo Huang;Wei-Bing Zhang(Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering,School of Physics and Electronic Sciences,Changsha University of Science and Technology,Changsha 410114,China)

机构地区：[1]Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering,School of Physics and Electronic Sciences,Changsha University of Science and Technology,Changsha 410114,China

出　　处：《Chinese Physics Letters》2024年第5期77-84,共8页中国物理快报（英文版）

基　　金：supported by National Natural Science Foundation of China (Grant No. 11874092);the Fok Ying Tong Education Foundation, China (Grant No. 161005);the Science Fund for Distinguished Young Scholars of Hunan Province (Grant No. 2021JJ10039)。

摘　　要：Quantum anomalous Hall(QAH) insulators have highly potential applications in spintronic device. However,available candidates with tunable Chern numbers and high working temperature are quite rare. Here, we predict a 1T-PrN_(2) monolayer as a stable QAH insulator with high magnetic transition temperature of above 600 K and tunable high Chern numbers of C = ±3 from first-principles calculations. Without spin-orbit coupling(SOC),the 1T-PrN_(2) monolayer is predicted to be a p-state Dirac half metal with high Fermi velocity. Rich topological phases depending on magnetization directions can be found when the SOC is considered. The QAH effect with periodical changes of Chern number(±1) can be produced when the magnetic moment breaks all twofold rotational symmetries in the xy plane. The critical state can be identified as Weyl half semimetals. When the magnetization direction is parallel to the z-axis, the system exhibits high Chern number QAH effect with C = ±3.Our work provides a new material for exploring novel QAH effect and developing high-performance topological devices.

关 键 词：MAGNETIZATION TOPOLOGICAL MONOLAYER 

分 类 号：O413[理学—理论物理]