Hole-Doped Nonvolatile and Electrically Controllable Magnetism in van der Waals Ferroelectric Heterostructures  

作　　者：姜新新 王智宽 李冲 孙雪莲 杨磊 李冬梅 崔彬 刘德胜 Xinxin Jiang;Zhikuan Wang;Chong Li;Xuelian Sun;Lei Yang;Dongmei Li;Bin Cui;Desheng Liu(School of Physics,National Demonstration Center for Experimental Physics Education,Shandong University,Jinan 250100,China;School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450001,China)

机构地区：[1]School of Physics,National Demonstration Center for Experimental Physics Education,Shandong University,Jinan 250100,China [2]School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450001,China

出　　处：《Chinese Physics Letters》2024年第5期107-119,共13页中国物理快报（英文版）

基　　金：supported by the Natural Science Foundation of Shandong Province (Grant Nos. ZR2020MA068, ZR2022MA083, and ZR2023MA018);the Major Basic Research Project of Shandong Province (Grant No. ZR2020ZD28)。

摘　　要：Electrical control of magnetism in van der Waals semiconductors is a promising step towards development of two-dimensional spintronic devices with ultralow power consumption for processing and storing information.Here, we propose a design for two-dimensional van der Waals heterostructures(vdWHs) that can host ferroelectricity and ferromagnetism simultaneously under hole doping. By contacting an In Se monolayer and forming an InSe/In_(2)Se_(3) vd WH, the switchable built-in electric field from the reversible out-of-plane polarization enables robust control of the band alignment. Furthermore, switching between the two ferroelectric states(P_↑ and P_↓)of hole-doped In_(2)Se_(3) with an external electric field can interchange the ON and OFF states of the nonvolatile magnetism. More interestingly, doping concentration and strain can effectively tune the magnetic moment and polarization energy. Therefore, this provides a platform for realizing multiferroics in ferroelectric heterostructures,showing great potential for use in nonvolatile memories and ferroelectric field-effect transistors.

关 键 词：polarization FERROELECTRIC DOPING 

分 类 号：O469[理学—凝聚态物理]