Current-Induced Magnetization Switching Behavior in Perpendicular Magnetized L1_(0)-MnAl/B2-CoGa Bilayer  

作　　者：孙宏利 韩荣坤 秦红蕊 赵旭鹏 谢志成 魏大海 赵建华 Hong-Li Sun;Rong-Kun Han;Hong-Rui Qin;Xu-Peng Zhao;Zhi-Cheng Xie;Da-Hai Wei;Jian-Hua Zhao(State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,China;International School of Microelectronics,Dongguan University of Technology,Dongguan 523808,China)

机构地区：[1]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100190,China [3]International School of Microelectronics,Dongguan University of Technology,Dongguan 523808,China

出　　处：《Chinese Physics Letters》2024年第5期138-143,共6页中国物理快报（英文版）

基　　金：supported by the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB44000000)。

摘　　要：Rare-earth-free Mn-based binary alloy L1_(0)-MnAl with bulk perpendicular magnetic anisotropy(PMA) holds promise for high-performance magnetic random access memory(MRAM) devices driven by spin-orbit torque(SOT). However, the lattice-mismatch issue makes it challenging to place conventional spin current sources, such as heavy metals, between L1_(0)-MnAl layers and substrates. In this work, we propose a solution by using the B2-CoGa alloy as the spin current source. The lattice-matching enables high-quality epitaxial growth of 2-nm-thick L1_(0)-MnAl on B2-CoGa, and the L1_(0)-MnAl exhibits a large PMA constant of 1.04 × 10^(6)J/m^(3). Subsequently, the considerable spin Hall effect in B2-CoGa enables the achievement of SOT-induced deterministic magnetization switching. Moreover, we quantitatively determine the SOT efficiency in the bilayer. Furthermore, we design an L1_(0)-MnAl/B2-CoGa/Co_(2)MnGa structure to achieve field-free magnetic switching. Our results provide valuable insights for achieving high-performance SOT-MRAM devices based on L1_(0)-MnAl alloy.

关 键 词：alloy enable holds 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] O469[自动化与计算机技术—计算机科学与技术]