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作 者:王瑞 丁建伟 孙飞 赵继民 裘晓辉 Rui Wang;Jianwei Ding;Fei Sun;Jimin Zhao;Xiaohui Qiu(Beijing Information Technology College,Beijing 100015,China;CAS Key Laboratory of Standardization and Measurement for Nanotechnology,CAS Center for Excellence in Nanoscience,National Center for Nanoscience and Technology,Beijing 100190,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Max Planck Institute for Chemical Physics of Solids,Dresden 01187,Germany;Songshan Lake Materials Laboratory,Dongguan 523808,China)
机构地区:[1]Beijing Information Technology College,Beijing 100015,China [2]CAS Key Laboratory of Standardization and Measurement for Nanotechnology,CAS Center for Excellence in Nanoscience,National Center for Nanoscience and Technology,Beijing 100190,China [3]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [4]University of Chinese Academy of Sciences,Beijing 100049,China [5]Max Planck Institute for Chemical Physics of Solids,Dresden 01187,Germany [6]Songshan Lake Materials Laboratory,Dongguan 523808,China
出 处:《Chinese Physics Letters》2024年第5期144-170,共27页中国物理快报(英文版)
基 金:supported by the National Key Research and Development Program of China (Grant No. 2021YFA1400201);the CAS Project for Young Scientists in Basic Research (Grant No. YSBR059);the Beijing Natural Science Foundation (Grant No. 4191003);the National Natural Science Foundation of China (Grant No. 11774408);the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. GJJSTD20200005);the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB36000000 and XDB30000000);the International Partnership Program of Chinese Academy of Sciences (Grant No. GJHZ1826);CAS Interdisciplinary Innovation Team。
摘 要:Controlling collective electronic states hold great promise for development of innovative devices. Here, we experimentally detect the modification of the charge density wave(CDW) phase transition within a 1T-TaS_(2) layer in a WS_(2)/1T-TaS_(2) heterostructure using time-resolved ultrafast spectroscopy. Laser-induced charge transfer doping strongly suppresses the commensurate CDW phase, which results in a significant decrease in both the phase transition temperature(T_(c)) and phase transition stiffness. We interpret the phenomenon that photoinduced hole doping, when surpassing a critical threshold value of ~ 10^(18)cm^(-3), sharply decreases the phase transition energy barrier. Our results provide new insights into controlling the CDW phase transition, paving the way for optical-controlled novel devices based on CDW materials.
关 键 词:DOPING TRANSITION TRANSITION
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