Investigation of helicity-dependent photocurrent of surface states in(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate  

作　　者：喻钦 俞金玲 陈涌海 赖云锋 程树英 何珂 Qin Yu;Jinling Yu;Yonghai Chen;Yunfeng Lai;Shuying Cheng;Ke He(School of Advanced Manufacturing,Fuzhou University,Quanzhou 362251,China;Institute of Micro/Nano Devices and Solar Cells,School of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China;Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering,Changzhou University,Changzhou 213164,China;Department of Physics,State Key Laboratory of Low Dimensional Quantum Physics,Tsinghua University,Beijing 100084,China)

机构地区：[1]School of Advanced Manufacturing,Fuzhou University,Quanzhou 362251,China [2]Institute of Micro/Nano Devices and Solar Cells,School of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China [3]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [4]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering,Changzhou University,Changzhou 213164,China [5]Department of Physics,State Key Laboratory of Low Dimensional Quantum Physics,Tsinghua University,Beijing 100084,China

出　　处：《Chinese Physics B》2024年第5期573-578,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.62074036,61674038,and 11574302);the Foreign Cooperation Project of Fujian Province,China(Grant No.2023I0005);the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics(Grant No.KF202108);the National Key Research and Development Program of China(Grant No.2016YFB0402303);the Foundation of Fujian Provincial Department of Industry and Information Technology of China(Grant No.82318075)。

摘　　要：Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate is regulated by temperature,light power,excitation wavelength,the source–drain and ionic liquid top-gate voltages,and the regulation mechanisms are discussed.It is demonstrated that(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplates may provide a good platform for novel opto-spintronics devices.

关 键 词：(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate helicity-dependent photocurrent circular photogalvanic effect ionic liquid gating 

分 类 号：O469[理学—凝聚态物理]