Structure,ferroelectric,and enhanced fatigue properties of sol–gel-processed new Bi-based perovskite thin films of Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)  

作　　者：宋伟宾 席国强 潘昭 刘锦 叶旭斌 刘哲宏 王潇 单鹏飞 张林兴 鲁年鹏 樊龙龙 秦晓梅 龙有文 Wei-Bin Song;Guo-Qiang Xi;Zhao Pan;Jin Liu;Xu-Bin Ye;Zhe-Hong Liu;Xiao Wang;Peng-Fei Shan;Lin-Xing Zhang;Nian-Peng Lu;Long-Long Fan;Xiao-Mei Qin;You-Wen Long(Department of Physics,Shanghai Normal University,Shanghai 200234,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Institute for Advanced Materials Technology,University of Science and Technology Beijing,Beijing 100083,China;Songshan Lake Materials Laboratory,Dongguan 523808,China;Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]Department of Physics,Shanghai Normal University,Shanghai 200234,China [2]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [3]Institute for Advanced Materials Technology,University of Science and Technology Beijing,Beijing 100083,China [4]Songshan Lake Materials Laboratory,Dongguan 523808,China [5]Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2024年第5期608-615,共8页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2021YFA1400300);the National Natural Science Foundation of China(Grant Nos.22271309,21805215,11934017,12261131499,and 11921004);the Beijing Natural Science Foundation(Grant No.Z200007);the Fund from the Chinese Academy of Sciences(Grant No.XDB33000000)。

摘　　要：Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties.New Bi-based perovskite thin films Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)(BCT–PT) are deposited on Pt(111)/Ti/SiO_(2)/Si substrates in the present study by the traditional sol–gel method.Their structures and related ferroelectric and fatigue characteristics are studied in-depth.The BCT–PT thin films exhibit good crystallization within the phase-pure perovskite structure,besides,they have a predominant(100) orientation together with a dense and homogeneous microstructure.The remnant polarization(2P_(r)) values at 30 μC/cm^(2) and 16 μC/cm^(2) are observed in 0.1BCT–0.9PT and 0.2BCT–0.8PT thin films,respectively.More intriguingly,although the polarization values are not so high,0.2BCT–0.8PT thin films show outstanding polarization fatigue properties,with a high switchable polarization of 93.6% of the starting values after 10^(8) cycles,indicating promising applications in ferroelectric memories.

关 键 词：FERROELECTRIC thin films PEROVSKITE PbTiO_(3)-BiMeO_(3) 

分 类 号：O469[理学—凝聚态物理] TB383.2[理学—电子物理学]