SiO_(2)掺杂量对SnO_(2)压敏电阻电气性能的影响  

Effect of SiO_(2)Doping Amount on Electrical Performance of SnO_(2)Varistor

作　　者：石钤文 赵洪峰[1] 谢清云 蒙晓记 SHI Qianwen;ZHAO Hongfeng;XIE Qingyun;MENG Xiaoji(The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment,School of Electrical Engineering,Xinjiang University,Urumqi 830046,China;Xi′an XD Arrester Co.,Ltd.,Xi′an 710200,China)

机构地区：[1]新疆大学电气工程学院,电力系统及大型发电设备安全控制和仿真国家重点实验室风光储分室,乌鲁木齐830046 [2]西安西电避雷器有限责任公司,西安710200

出　　处：《机械工程材料》2024年第4期57-62,共6页Materials For Mechanical Engineering

基　　金：新疆维吾尔自治区自然科学基金资助项目(2022D01C21)。

摘　　要：采用传统方法制备了掺杂不同物质的量分数(0.01%,0.05%,0.10%,0.15%,0.20%)SiO_(2)的SnO_(2)压敏电阻,研究了SiO_(2)掺杂量对SnO_(2)压敏电阻电气性能的影响。结果表明:随着SiO_(2)掺杂量的增加,SnO_(2)压敏电阻的电压梯度、非线性系数、势垒高度、施主密度和界面态密度均先增大后减小,泄漏电流密度先减小后增大,晶界电阻增大;当SiO_(2)物质的量分数为0.10%时,SnO_(2)压敏电阻的综合电气性能最佳,其电压梯度、非线性系数、施主密度、界面态密度、势垒高度最大,泄漏电流密度最小,分别为582 V·mm^(-1),33,1.7×10^(23)m-3,6.7×10^(16)m^(-2),2.03 eV,7.06μA·cm^(-2)。SnO_(2)varistor doped with SiO_(2)of different mole fractions(0.01%,0.05%,0.10%,0.15%,0.20%)was prepared by traditional method.The effect of SiO_(2)doping amounts on the electrical performance of SnO_(2)varistor was studied.The results show that with the increase of SiO_(2)doping amounts,the voltage gradient,nonlinear coefficient,barrier height,donor density and interfacial state density of SnO_(2)varistor first increased and then decreased,the leakage current density first decreased and then increased,and the grain boundary resistance increased.When the mole fraction of SiO_(2)was 0.10%,the SnO_(2)varistor had the best comprehensive electrical performance,with the largest voltage gradient,nonlinear coefficient,donor density,interfacial state density and the barrier height,and the smallest leakage current density,which were 582 V·mm^(-1),33,1.7×10^(23)m^(-3),6.7×10^(16)m^(-2),2.03 eV,7.06μA·cm^(-2),respectively.

关 键 词：SnO_(2)压敏电阻 电气性能 电压梯度 势垒高度 

分 类 号：TB321[一般工业技术—材料科学与工程]