MEMS器件湿法腐蚀工艺均匀性的提升技术  

Improvement Technology for Uniformity of MEMS Wet Etching Process

作　　者：闾新明 姚阳文 LYU Xinming;YAO Yangwen(United Nova Technology Co.,Ltd.,Shaoxing 312000,China)

机构地区：[1]芯联集成电路制造股份有限公司,浙江绍兴312000

出　　处：《电子工艺技术》2024年第3期17-20,共4页Electronics Process Technology

摘　　要：针对湿法腐蚀工艺下晶圆面内均匀性大于5%、湿法工艺无法兼容低成本和高质量的难点,研究了湿法工艺各个参数对片内均匀性的影响。分别讨论了腐蚀槽温度、晶圆进出腐蚀槽时间、晶圆出腐蚀槽到进水槽的时间间隔以及腐蚀槽循环流量对8英寸晶圆腐蚀均匀性的影响。综合单一因素对比结果,确认了优化后8英寸MEMS电容式麦克风的湿法腐蚀工艺条件。优化后,晶圆片内均匀性可以由原来的6.17%提升到3.47%,突破了晶圆内大面积湿法腐蚀片内均匀性大于5%的难点。麦克风重要特征参数吸合电压良率也从原来的91%提升到99%,满足规模化大批量生产的要求,为后续器件性能提升提供了新的研究思路。Aiming at the difficulties that the in-plane uniformity of wafers under the wet etching process is greater than 5%and the wet process cannot be compatible with low cost and high quality,the influence of each parameter of the wet process on the in-plane uniformity is studied.The effects of etching tank temperature,wafer in and out of the etching tank time,the time interval between the wafer out of the etching tank and into the water tank,and the etching tank circulating flow on the 8-inch wafer etching uniformity are discussed respectively.Comprehensive single-factor comparison results confirm the optimized wet etching process conditions for 8-inch MEMS condenser microphones.After optimization,the wafer intra-chip uniformity can be improved from the original 6.17%to 3.47%,breaking through the large area within the wafer wet corrosion intra-chip uniformity greater than 5%of the difficulty.The important characteristic parameter of the microphone,the yield of the suction voltage,has also been increased from the original 91%to 99%,meeting the requirements of large-scale production and providing new research ideas for improving the performance of subsequent devices.

关 键 词：麦克风 腐蚀均匀性 温度 时间 流量 

分 类 号：TN305[电子电信—物理电子学]