锑掺杂对柔性Cu_(2)ZnSn(S,Se)_(4)薄膜应力及其太阳电池性能的影响  

Effects of Antimony Doping on Stress of Flexible Cu_(2)ZnSn(S,Se)_(4) Thin Film and Performance of Its Solar Cells

作　　者：孙雨豪 陈春阳 杨帅博 俞乐 黄海斌 檀仔航 孙孪鸿 Sun Yuhao;Chen Chunyang;Yang Shuaibo;Yu Le;Huang Haibin;Tan Zaihang;Sun Luanhong(School of Materials Engineering,Jinling Institute of Technology,Nanjing 211169,China)

机构地区：[1]金陵科技学院材料工程学院,南京211169

出　　处：《半导体技术》2024年第6期531-537,共7页Semiconductor Technology

基　　金：国家自然科学基金(62304093);中国博士后科学基金(2022M722339);江苏省大学创新创业训练计划项目(202313573037Z)。

摘　　要：Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)薄膜中的应力是影响其柔性太阳电池弯曲稳定性的重要因素。采用电子束蒸发法在Cu_(2)ZnSnS_(4)(CZTS)金属预制层中蒸发不同厚度(20、40、60、80 nm)的Sb薄膜,并结合后硒化的方法对CZTSSe薄膜进行Sb掺杂。研究发现Sb掺杂可以有效改善CZTSSe薄膜的结晶质量,提高太阳电池的光电转换效率(PCE)和弯曲稳定性。当Sb掺杂层的厚度为40 nm时,可以在最大程度上提升CZTSSe薄膜的结晶质量,相比未掺杂Sb的情况,其残余应力从-3.93 GPa降低至-2.19 GPa,其太阳电池的PCE由2.04%提升至4.41%;在弯曲角度60°、弯曲100次后,柔性CZTSSe薄膜太阳电池的PCE仍能保持原有效率的89.8%以上,表现出优异的弯曲稳定性。The stress in Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)thin film is an important factor affecting the bending stability of its flexible solar cells.The electron beam evaporation method was used to evaporate Sb thin films with different thicknesses(20,40,60,80 nm)in Cu_(2)ZnSnS_(4)(CZTS)metal prefabricated layer,and the post selenization method was used for Sb doping of CZTSSe thin films.It is found that Sb doping can effectively improve the crystallization quality of the CZTSSe thin film,enhance the photoelectric conversion efficiency(PCE)and bending stability of its solar cells.When the thickness of the Sb-doped layer is 40 nm,the crystallization quality of the CZTSSe thin film is optimum,and compared with the CZTSSe thin film without Sb doping,its residual stress is decreased from-3.93 GPa to-2.19 GPa,the PCE of its solar cell is increased from 2.04%to 4.41%.After bending 100 times at a bending angle of 60°,the PCE of flexible CZTSSe thin film solar cells can still maintain over 89.8%of the original efficiency,demonstrating excellent bending stability.

关 键 词：CZTSSe薄膜太阳电池 Sb掺杂 残余应力 光电转换效率(PCE) 弯曲稳定性 

分 类 号：TM914.4[电气工程—电力电子与电力传动]