一种L波段300W GaN脉冲功率模块  

An L-Band 300 W GaN Pulsed Power Module

作　　者：董四华[1] 刘英坤[1] 高永辉[1] 秦龙 Dong Sihua;Liu Yingkun;Gao Yonghui;Qin Long(The 13^(th)Research Institute,CETC,Shjiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2024年第6期555-560,共6页Semiconductor Technology

摘　　要：随着第三代半导体GaN器件技术的不断发展,GaN高电子迁移率晶体管(HEMT)在电子系统中逐步得到了广泛应用。研制了一款小型化L波段300 W GaN脉冲功率模块。研发了满足高压脉冲工作条件的GaN HEMT芯片,采用负载牵引技术进行了器件大信号阻抗参数提取,并以此为基础设计了小型化匹配网络进行阻抗变换。基于高压驱动芯片和开关器件芯片设计了小型化高压脉冲调制电路。测试结果表明,在工作频率990~1130 MHz、工作电压50 V、脉冲宽度100μs、占空比10%下,功率模块脉冲输出功率大于300 W,功率附加效率大于53%,功率增益大于38 dB。功率模块尺寸为30 mm×30 mm×8 mm。With the continuous development of the third generation of semiconductor GaN device technology,GaN high electron mobility transistors(HEMTs)are gradually widely applied in electronic systems.A miniaturized L-band 300 W GaN pulsed power module was developed.A GaN HEMT chip was developed to meet the working conditions of high-voltage pulses,and the large signal impedance parameters of the device were extracted by the load-pull technology,and based on this a miniaturized matching network was designed for impedance transformation.Based on the high-voltage driver chip and switching device chip,a miniaturized high-voltage pulsed modulation circuit was designed.The test results show that the pulsed output power of the power module is greater than 300 W,the power added efficiency is greater than 53%,and the power gain is greater than 38 dB,under the working frequency of 990-1130 MHz,the working voltage of 50 V,the pulse width of 100μs and the duty cycle of 10%.The power module size is 30 mm×30 mm×8 mm.

关 键 词：GaN高电子迁移率晶体管(HEMT) 负载牵引技术 高压脉冲调制 L波段 功率模块 

分 类 号：TN722.75[电子电信—电路与系统]