Recent progresses in thermal treatment of β-Ga_(2)O_(3) single crystals and devices  

作　　者：Yuchao Yan Zhu Jin Hui Zhang Deren Yang 

机构地区：[1]State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China [2]Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,ZJU-Hangzhou Global Scientific and Technological Innovation Center,Hangzhou 311200,China

出　　处：《International Journal of Minerals,Metallurgy and Materials》2024年第7期1659-1677,共19页矿物冶金与材料学报（英文版）

基　　金：the‘Pioneer’and‘Leading Goose’R&D Program of Zhejiang,China(No.2023C01193);the National Natural Science Foundation of China(Nos.52202150 and 22205203);the Foundation for Innovative Research Groups of the National Natural Science Foundation of China(No.61721005);the Fundamental Research Funds for the Central Universities(Nos.226-2022-00200 and 226-2022-00250);the National Program for Support of Topnotch Young Professionals。

摘　　要：In recent years,ultra-wide bandgap β-Ga_(2)O_(3) has emerged as a fascinating semiconductor material due to its great potential in power and photoelectric devices.In semiconductor industrial,thermal treatment has been widely utilized as a convenient and effective approach for substrate property modulation and device fabrication.Thus,a thorough summary of β-Ga_(2)O_(3) substrates and devices behaviors after high-temperature treatment should be significant.In this review,we present the recent advances in modulating properties of β-Ga_(2)O_(3) substrates by thermal treatment,which include three major applications:(ⅰ)tuning surface electrical properties,(ⅱ)modifying surface morphology,and(ⅲ)oxidating films.Meanwhile,regulating electrical contacts and handling with radiation damage and ion implantation have also been discussed in device fabrication.In each category,universal annealing conditions were speculated to figure out the corresponding problems,and some unsolved questions were proposed clearly.This review could construct a systematic thermal treatment strategy for various purposes and applications of β-Ga_(2)O_(3).

关 键 词：β-gallium oxide thermal treatment SUBSTRATES DEVICES 

分 类 号：TN304.21[电子电信—物理电子学]