高温高压非金属元素掺杂金刚石的研究进展  

Research of Doping Diamond with Non-metallic Elements by High Temperature and High Pressure

作　　者：吴坦洋 徐三魁[1] 李彦涛[1] 康梦鑫 陈兆奇 Wu Tanyang;Xu Sankui;Li Yantao;Kang Mengxin;Chen Zhaoqi(Henan University of Technology,Zhengzhou 450001,China)

机构地区：[1]河南工业大学,河南郑州450001

出　　处：《广东化工》2024年第8期38-40,17,共4页Guangdong Chemical Industry

摘　　要：金刚石因其优越的极限特性,使得其应用领域非常广泛。金刚石的功能特性往往由其内部所含杂质元素决定,包括非金属元素如硼(B)、氮(N)、硫(S)和磷(P)等。掺杂这些单元素以合成金刚石一直是国内外研究课题的热点。本文首先介绍了金刚石单晶在高温高压条件下的合成方法及其研究发展现状,随后分析了硼(B)、氮(N)、硫(S)、磷(P)等单元素掺杂对金刚石晶体生长和电学等性能的影响。同时对金刚石在半导体中的应用以及金刚石中的含氮色心进行了分析。最后展望了掺杂后金刚石的光学和电学性能研究前景,并指出进一步探索多元素共掺杂的理论和实验方法对提升掺杂金刚石的性能具有重要意义。Diamond has a range of extreme properties that are superior to those of other materials and are used in a wide variety of applications.The functional properties of diamond are often determined by the impurity elements contained within it,including non-metallic elements such as boron(B),nitrogen(N),sulfur(S)and phosphorus(P).Doping these elements to synthesize diamond has become a hot spot of research at home and abroad.This paper firstly introduces the synthesis method of diamond single crystals under high temperature and high pressure conditions and its research status and development,and then analyzes the effects of doping of single elements such as boron(B),nitrogen(N),sulfur(S),and phosphorus(P)on the growth of diamond crystals and electrical properties.The applications of diamond in semiconductors and the nitrogen-containing color centers in diamond are also analyzed and summarized in detail.Finally,the prospects for the study of optical and electrical properties of doped diamond are envisioned,and it is pointed out that further exploration of the theoretical and experimental methods of multi-element co-doping is of great significance to enhance the properties of doped diamond.

关 键 词：金刚石 高温高压 非金属元素掺杂 半导体材料 含氮色心 

分 类 号：TQ[化学工程]