An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump  

作　　者：Yiling Xie Baochuang Wang Dihu Chen Jianping Guo 

机构地区：[1]School of Electronics and Information Technology,Sun Yat-sen University,Guangzhou 510006,China [2]School of Microelectronics,University of Science and Technology of China,Hefei 230000,China

出　　处：《Journal of Semiconductors》2024年第6期23-34,共12页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China under Grant 62274189;the Natural Science Foundation of Guangdong Province,China,under Grant 2022A1515011054;the Key Area R&D Program of Guangdong Province under Grant 2022B0701180001.

摘　　要：In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power consumption.An event-driven charge pump(CP)loop with the dynamic strength control(DSC),is proposed in this paper,which overcomes trade-offs inherent in conventional structures.The presented design addresses and resolves the large signal stability issue,which has been previously overlooked in the event-driven charge pump structure.This breakthrough allows for the full exploitation of the charge-pump structure's poten-tial,particularly in enhancing transient recovery.Moreover,a dynamic error amplifier is utilized to attain precise regulation of the steady-state output voltage,leading to favorable static characteristics.A prototype chip has been fabricated in 65 nm CMOS technology.The measurement results show that the proposed OCL-LDO achieves a 410 nA low quiescent current(IQ)and can recover within 30 ns under 200 mA/10 ns loading change.

关 键 词：output-capacitorless low-dropout regulator fast transient low quiescent current event-driven charge pump 

分 类 号：TN3[电子电信—物理电子学]