硅压阻式压力敏感芯体应变电阻失效分析  

Failure analysis of strain resistor in silicon piezoresistive pressure sensitive core

作　　者：徐振忠 闫云龙[2] 尤佳 朱乾龙 马丽娜 吴佐飞 XU Zhenzhong;YAN Yunlong;YOU Jia;ZHU Qianlong;MA Lina;WU Zuofei(The 49th Research Institute of China Electronics Technology Group Corporation,Harbin 150028,China;Beijing Institute of Space Mechanics&Electricity,Bejing 100094,China)

机构地区：[1]中国电子科技集团公司第四十九研究所,黑龙江哈尔滨150028 [2]北京空间机电研究所,北京100094

出　　处：《传感器与微系统》2024年第6期38-41,共4页Transducer and Microsystem Technologies

摘　　要：通过对硅压阻式压力敏感芯体内部应变电阻失效故障的排查及定位分析,确立了应变电阻缺陷造成传感器失效机理,总结激发应变电阻缺陷暴露的检测方法,确定对压力敏感芯体进行1200 h常温电老炼的筛选方案。筛选试验结果表明:增加1200 h常温电老炼后,可剔除由于应变电阻缺陷造成敏感芯体输出漂移的失效元件。Through investigation and localization analysis of internal strain resistor faults in silicon piezoresistive pressure sensitive cores,the sensor failure mechanism caused by strain resistor defects is verified.The detection methods for stimulating strain resistor defects exposing are summarized.Screening scheme for 1200 h constant temperature electrical aging of pressure sensitive cores body is determined.The screening experimental results show that adding 1200 h of room temperature electrical aging can eliminate failed components caused by sensitive core body output drift due to strain resistor defects.

关 键 词：硅压阻式 压力敏感芯体 应变电阻 失效机理 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]