退火对不同金属薄膜上的BN/MoS_(2)异质结构形貌、结构和电性能的影响  

Effect of annealing on morphology,structure and electrical properties of BN/MoS_(2) heterostructures on different metal films

作　　者：刘春泉 熊芬 马佳仪 周锦添 蒋玉琳 贺紫怡 陈敏纳 张颖 LIU Chun-quan;XIONG Fen;MA Jia-yi;ZHOU Jin-tian;JIANG Yu-lin;HE Zi-yi;CHEN Min-na;ZHANG Ying(School of Materials Science and Engineering,Hunan Institute of Technology,Hengyang 421002,China;School of Computer Science and Engineering,Hunan Institute of Technology,Hengyang 421002,China)

机构地区：[1]湖南工学院材料科学与工程学院,湖南衡阳421002 [2]湖南工学院计算机科学与工程学院,湖南衡阳421002

出　　处：《材料热处理学报》2024年第5期142-151,共10页Transactions of Materials and Heat Treatment

基　　金：湖南省科技人才托举工程项目“小荷”科技人才专项(2023TJ-X10);湖南省自然科学基金项目(2023JJ50108);湖南省创新型省份建设专项科普专题项目(2023ZK4316);湖南省应用特色学科材料科学与工程学科(湘教通[2022]351号);湖南工学院自科培育项目(2022HY007);2023年度大学生创新创业训练计划项目(国家级:S202311528049、S202311528056X,省级:S202311528111、S202311528096X)。

摘　　要：以过渡金属硫化物、氮化硼等二维层状材料为基础,研究了一种简单可靠的集成电路制造方法。在这项工作中,采用射频磁控溅射在室温下逐层制备了M/BN/MoS_(2)(M=Al、Ti、Mo和Ag)纳米薄膜,其中BN/MoS_(2)为未发生化学反应的异质结构,然后在500℃进行退火。结果表明:所制备的金属(Al、Ti、Mo和Ag)、BN和MoS_(2)薄膜均匀连续,特别是BN/MoS_(2)异质结构界面清晰、结合紧密。退火后,顶层MoS_(2)薄膜颗粒大小、粗糙度和结晶性显著提高,且杂质减少甚至消失,其中Ag/BN膜基底上MoS_(2)薄膜结晶性最好,且出现了较大的片层状形态。电性能测试显示金属/BN和BN/MoS_(2)异质结构界面的肖特基势垒使得样品的I-V特性曲线呈明显的非线性。Ti基由于退火后氧化,电阻率最大,Mo基功函数最大,电阻率其次,Ag基功函数相对较低所以电阻率较低,而Al则由于低的功函数、结构匹配及载流子浓度等因素导致其电阻率最低。A simple and reliable integrated circuit manufacturing method was studied based on two-dimensional layered materials such as transition metal sulfides and boron nitride(BN).In this work,M/BN/MoS_(2)(M=Al,Ti,Mo and Ag)nano films were prepared layer by layer at room temperature using radio frequency magnetron sputtering,wherein the BN/MoS_(2) was a heterogeneous structure without chemical reaction,and then annealed at 500℃.The results show that the prepared metal(Al,Ti,Mo and Ag),BN and MoS_(2) thin films are uniform and continuous,especially the BN/MoS_(2) heterostructure interface is clear and tightly bonded.After annealing,the particle size,roughness and crystallinity of the top layer MoS_(2) film are significantly improved,and the impurities are reduced or even disappeared.Among them,the MoS_(2) film on the Ag/BN film substrate has the best crystallinity and exhibits a large lamellar morphology.The electrical performance tests show that the Schottky barrier at the interface of the metal/BN and BN/MoS_(2) heterostructures results in a significant nonlinearity in the I-V characteristic curve of the samples.Due to oxidation after annealing,Ti has the highest resistivity,while Mo has the highest work function and a slightly lower resistivity than Ti.Ag has a relatively low work function,and a lower resistivity than Mo,while Al has the lowest resistivity due to the factors such as low work function,structural matching and high carrier concentration.

关 键 词：BN/MoS_(2)异质结构 金半接触 连续逐层沉积 退火 射频磁控溅射 

分 类 号：TQ136.12[化学工程—无机化工]