低噪声放大器的注入损伤效应研究  

The Research on Injection Damage Effect of Low Noise Amplifier

作　　者：陈政宇 李峙 孙美秋 崔强[1] 项道才[1] Chen Zhengyu;Li Zhi;Sun Meiqiu;Cui Qiang;Xiang Daocai

机构地区：[1]中国电子技术标准化研究院

出　　处：《安全与电磁兼容》2024年第3期49-56,62,共9页Safety & EMC

基　　金：国家装备发展部资助项目(X环境下X电路防护方法标准研究)。

摘　　要：低噪声放大器是射频前端电路中非常敏感的部分,易受到强电磁环境辐射经天线耦合所产生大电压/电流的影响,出现性能降级甚至损伤击穿等问题。文章以典型低噪声放大器作为研究对象,分别采用连续波和脉冲波信号对低噪声放大器开展注入损伤试验,以其增益作为主要参考参数,研究了低噪声放大器的注入损伤效应。分析了注入信号中心频率、脉冲重复频率和脉冲宽度等参数对低噪声放大器的损伤阈值的影响,旨在为射频电路器件级的电磁安全防护提供参考。Low noise amplifier(LNA)is a very sensitive part of the RF front-end circuit,which is susceptible to the influence of the induced voltage/current signal generated by external strong electromagnetic environment signal through antenna coupling,resulting in performance degradation or even damage breakdown and other problems.In this paper,the typical LNA circuits are taken as the research objects,and continuous wave and pulse wave signals are used to conduct injection tests on LNA,with the gain as the main reference parameter,the injection damage effect of LNA has been studied.Aiming to provide reference for device-level electromagnetic security protection,and the effects of parameters such as the center frequency of injection signal,pulse repetitive frequency,and pulse width on the damage threshold of the LNA have been analyzed.

关 键 词：低噪声放大器 注入损伤效应 损伤阈值 

分 类 号：TN7[电子电信—电路与系统]