Amplified internal electric field of Cs_(2)CuBr_(4)@WO_(3-x)S-scheme heterojunction for efficient CO_(2)photoreduction  

作　　者：Zhijie Zhang Xuesheng Wang Junyi Qian Jiayue Xu 

机构地区：[1]School of Materials Science and Engineering,Shanghai Institute of Technology,Shanghai 201418,China

出　　处：《Journal of Energy Chemistry》2024年第5期521-533,共13页能源化学（英文版）

基　　金：This work was financially supported by the National Natural Science Foundation of China(51972213);Natural Science Foundation of Shanghai(22ZR1460700).

摘　　要：Heterojunction construction,especially S-scheme heterojunction,represents an efficient universal strategy to achieve high-performance photocatalytic materials.For further performance stimulation of these well-designed heterojunctions,modulating the interfacial internal electric field(IEF)to steer dynamic charge transfer represents a promising approach.Herein,we realized the precise regulation of Fermi level(E_(F))of the oxidation semiconductor(mesoporous WO_(3-x))by tailoring the concentration of oxygen vacancies(V_(O)),maximizing the IEF intensity in Cs_(2)CuBr_(4)@WO_(3-x)(CCB@WO_(3-x))S-scheme heterojunction.The augmented IEF affords a robust driving force for directional electron delivery,leading to boosted charge separation.Hence,the developed CCB@WO_(3-x)S-scheme heterojunction demonstrated outstanding photocatalytic CO_(2)reduction performance,with the electron consumption rate(Relectron)up to 390.34μmol g^(-1)h^(-1),which is 3.28 folds higher than that of pure CCB.An in-depth analysis of the S-scheme electron transfer mode was presented via theoretical investigations,electron spin resonance(ESR),photo-irradiated Kelvin probe force microscopy(KPFM),and in-situ X-ray photoelectron spectroscopy(XPS).Finally,the CO_(2)photoconversion route was explored in detail using in-situ diffuse reflectance infrared Fourier transform spectroscopy(DRIFTS)and DFT theoretical calculations.

关 键 词：Cs_(2)CuBr_(4) WO_(3-x) Oxygen vacancy S-scheme heterojunction Internal electricfield 

分 类 号：O643.36[理学—物理化学] O644.1[理学—化学]