GaAs/AlGaAs异质结量子点接触中的散粒噪声实验研究  

Experimental study of shot noise in GaAs/AlGaAs heterojunction quantum dot contact

作　　者：郭洪民 岳晓凯 何建红 GUO Hong-Min;YUE Xiao-Kai;HE Jian-Hong(College of Physics,Sichuan University,Chengdu 610064,China;School of Physics and Electronic Engineering,Sichuan Normal University,Chengdu 610101,China)

机构地区：[1]四川大学物理学院,成都610064 [2]四川师范大学物理与电子工程学院,成都610101

出　　处：《四川大学学报（自然科学版）》2024年第3期238-246,共9页Journal of Sichuan University(Natural Science Edition)

基　　金：国家重点研发计划项目(2022YFF0608302)。

摘　　要：量子点接触是一种具有丰富物理内涵的准一维受限量子体系,是研究电子量子输运的理想体系.量子点接触产生的散粒噪声已经成为介观物理越来越感兴趣的一个热点.本文在传统的GaAs/AlGaAs材料中设计了量子点接触器件,分别测量了它处于零磁场与高磁场下的散粒噪声,分析了处于20 mK的极低温下器件的散粒噪声随源漏偏压、栅电压以及磁场等参数的变化规律.我们得到了Fano因子随栅电压的变化规律,并与器件的电导平台作对比,分析了前两个霍尔通道从关闭到打开的过程中电子的散射行为.本文的研究会加深我们对量子点接触结构中电子量子输运性质的理解.Quantum point contact is a kind of quasi one-dimensional confined quantum system with rich physical connotation,and it is an ideal system for studying electron quantum transport.Shot noise generated by quantum point contact has become a hot spot of increasing interest in mesoscopic physics.In this paper,a quantum point contact device is designed in the traditional GaAs/AlGaAs material.The shot noise of the device under zero magnetic field and high magnetic field is measured respectively.The variation law of the shot noise of the device under extremely low temperature of 20 mK with the source-drain bias,gate voltage and magnetic field is analyzed.The variation of Fano factor with gate voltage is obtained and compared with the conductance platform of the device,the scattering behavior of electrons in the first two hall channels from closing to opening is analyzed.Research in this paper will give us a deep understanding of the quantum transport properties of electrons in quantum point contact.

关 键 词：量子点接触 电子量子输运 散粒噪声 Fano因子 

分 类 号：O469[理学—凝聚态物理]