一步TCVD法制备大面积碳纳米管冷阴极及其场致发射性能研究  

Preparation of large area carbon nanotubes cold cathode by one-step TCVD and its performance on field emission

作　　者：孙泽奇 王辉[1] 张远鹏 唐永亮 吕文梅 刘庆想[1] 欧凯 夏钰东 张彦博 薛嫱 SUN Ze-Qi;WANG Hui;ZHANG Yuan-Peng;TANG Yong-Liang;LÜWen-Mei;LIU Qing-Xiang;OU Kai;XIA Yu-Dong;ZHANG Yan-Bo;XUE Qiang(School of Physical Science and Technology,Southwest Jiaotong University,Chengdu 610031,China;School of Materials Science and Engineering,Southwest Jiaotong University,Chengdu 610031,China)

机构地区：[1]西南交通大学物理科学与技术学院,成都610031 [2]西南交通大学材料科学与工程学院,成都610031

出　　处：《四川大学学报（自然科学版）》2024年第3期290-296,共7页Journal of Sichuan University(Natural Science Edition)

基　　金：中央高校基本科研业务费(2682023GF027);光电信息技术教育部重点实验室(天津大学)开放基金(2023KFKT014)。

摘　　要：本文提出一步热化学气相沉积法(TCVD)热解二茂铁,并直接在硅衬底上制备大面积(1 cm^(2))、高质量碳纳米管(CNTs)场致发射冷阴极阵列的制备工艺.通过调控二茂铁的热解温度(650~1000℃),获得了最佳的二茂铁的碳转化效率以及高结晶度的碳纳米管阵列.研究了不同热解温度下制备的碳纳米管微观形貌及其对场致发射性能的影响机制.场致发射实验测试表明在热解温度850℃条件下制备的碳纳米管冷阴极其开启电场(10μA/cm^(2))和阈值电场(1 mA/cm^(2))分别为1.32 V/μm和2.64 V/μm,最大电流密度为14.51 mA/cm^(2),对应的场增强因子为13267,表现出良好的场发射性能.本文提出的一步制备碳纳米管冷阴极阵列的制备方法无需任何蚀刻气体或光刻图案工艺,该方法安全、经济、可重复性好,在碳纳米管场发射冷阴极领域具有广阔的应用前景.An innovative one-step Thermal Chemical Vapor Deposition(TCVD)method is presented for the synthesis of large-area(1 cm2)carbon nanotubes(CNTs)directly on silicon substrates by using ferrocene pyrolysis.By precisely controlling the pyrolysis temperature of ferrocene within the range of 650~1000℃,optimal ferrocene to carbon conversion efficiency and high-quality carbon nanotubes with excellent crystallinity are achieved.The consequential impact of varying pyrolysis temperatures on the microstructure of carbon nanotubes and their field emission performance is thoroughly investigated.The results of the field emission experiments demonstrate that the carbon nanotubes synthesized under the optimized pyrolysis temperature(850℃)exhibit outstanding field emission characteristics,with impressive turn-on field(10μA/cm2)and threshold field(1 mA/cm2)values of 1.32 V/μm and 2.64 V/μm,respectively.Furthermore,these CNTs display a remarkable maximum current density of 14.51 mA/cm2 and a field enhancement factor of 13267.The proposed one-step fabrication method,which eliminates the need for etching gas or photolithography patterning processes,not only ensures safety and cost-effectiveness but also allows for high reproducibility.As a result,it holds significant potential for utilization in the field emission cold cathodes of carbon nanotubes.

关 键 词：碳纳米管 化学气相沉积法 二茂铁 热解温度 场致发射 

分 类 号：O462.4[理学—电子物理学]