基于EG1163S的降压开关电源设计  

EG1163S Based Buck Switching Power Supply Design

作　　者：刘冠男 王知学 申刚 臧佳尉 朱静淑 LIU Guannan;WANG Zhixue;SHEN Gang;ZANG Jiawei;ZHU Jingshu(School of Rail Transportation,Shandong Jiaotong University,Jinan 250000,China)

机构地区：[1]山东交通学院轨道交通学院,山东济南250000

出　　处：《通信电源技术》2024年第9期121-123,共3页Telecom Power Technology

摘　　要：随着技术的进步,开关电源朝着小型、轻量及高效的方向发展。以高压大电流降压型直流/直流(Direct Current/Direct Current,DC/DC)电源管理芯片EG1163S和金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor,MOSFET)为核心器件设计的降压型开关电源具有小型、低损耗及高效率的特点。该电源由滤波电路、DC/DC转换电路、限流保护电路以及金属氧化物半导体(Metal Oxide Semiconductor,MOS)管驱动电路等搭建而成,具有对高电压降压的功能,十分适用于高压大电流场合。With the advancement of technology,switching power supplies are moving towards the direction of small size,light weight and high efficiency.The high-voltage and high-current step-down Direct Current/Direct Current(DC/DC)power management chip EG1163S and Metal Oxide Semiconductor Field Effect Transistor(MOSFET)are the core devices designed with small size,low loss and high efficiency.The step-down switching power supply is designed as a core device with small size,low loss and high efficiency.The power supply is constructed by filter circuit,DC/DC converter circuit,current limiting protection circuit and Metal Oxide Semiconductor(MOS)tube driver circuit,etc.It has the function of bucking high voltage,which is very suitable for high-voltage and high-current occasions.

关 键 词：直流/直流(DC/DC)电源 金属氧化物半导体场效应晶体管(MOSFET) 高电压降压 

分 类 号：TN713[电子电信—电路与系统]