氧化亚锡/聚酰亚胺复合薄膜制备及介电性能研究  

Preparation and dielectric properties of stannous oxide/polyimide composite films

作　　者：李科 杨林 杨麟 杜娟 李新跃 LI Ke;YANG Lin;YANG Lin;DU Juan;LI Xinyue(College of Materials Science and Engineering,Sichuan University of Science and Engineering,Zigong 643000,China)

机构地区：[1]四川轻化工大学材料科学与工程学院,四川自贡643000

出　　处：《功能材料》2024年第5期5141-5146,共6页Journal of Functional Materials

基　　金：四川省科技计划资助项目(2022ZHCG0078)。

摘　　要：采用水热法合成了氧化亚锡(SnO),然后再通过原位聚合法将合成的SnO引入到聚酰亚胺基体中,制得SnO/PI复合薄膜。SnO的含量对该薄膜的介电常数、介电损耗、拉伸强度和击穿强度具有显著影响。当SnO含量为10%(质量分数)时,SnO/PI复合薄膜的介电常数高达456,介电损耗仅为0.034,拉伸强度为65 MPa,击穿强度为146.9 MV/m。将SnO引入到PI基体中能改善PI薄膜的介电性能,使其在储能、航空航天、绝缘等领域有很好的应用前景。In this paper,stannous oxide(SnO)was synthesized by hydrothermal method,and then the obtained SnO was introduced into polyimide matrix by in-situ polymerization method to prepare SnO/PI composite films.The contents of SnO have significant influence on the dielectric constant,dielectric loss,tensile strength and breakdown strength of the film.When the contents of SnO was 10wt%,the dielectric constant of the SnO/PI composite film was as high as 456,the dielectric loss was only 0.034,the tensile strength was 65 MPa,and the breakdown strength was 146.9 MV/m,respectively.The introduction of SnO into PI could greatly improve the dielectric properties of the composite PI films,so that it has a good application prospect in energy storage,aerospace,insulation and other fields.

关 键 词：聚酰亚胺 复合薄膜 氧化亚锡 介电性能 介电损耗 

分 类 号：O0631[理学] TB324[一般工业技术—材料科学与工程]