Fe掺杂的单晶Ni薄膜的反常霍尔效应  

The Anomalous Hall Effect in Single Crystal Ni Film By Doping Fe Impurities

作　　者：李岩 程雅慧 刘晖 Li Yan;Cheng Yahui;Liu Hui(College of Electronic Information and Optical Engineering,Nankai University,Tianjin 300350,China)

机构地区：[1]南开大学电子信息与光学工程学院,天津300350

出　　处：《南开大学学报（自然科学版）》2024年第2期88-93,共6页Acta Scientiarum Naturalium Universitatis Nankaiensis

基　　金：国家自然科学基金(52071183,51871122)。

摘　　要：解明并调控磁性材料中反常霍尔效应的不同来源是实现自旋电子器件高集成度的关键.首次利用离子束溅射法在单晶MgO(100)基底上外延生长了Fe掺杂的单晶Ni(100)(Fe-Ni)薄膜,通过研究不同厚度的Fe-Ni薄膜在外加磁场下的电输运性质,分离和解明了斜散射、侧跳和本征3种机制对反常霍尔效应的贡献.结果表明,Fe的掺杂调控了反常霍尔效应中3种机制的贡献比例,相比于纯的单晶Ni薄膜,Fe的掺杂增大了斜散射机制的贡献,降低了本征机制的贡献且几乎不会影响侧跳机制的贡献.以上结果为实现磁性材料中反常霍尔效应的定向调控提供了参考.Clarifying and tuning the origin of anomalous Hall effect in magnetic materials is the key to achieving high integration of spintronic devices.The epitaxial growth of Fe doped single crystal Ni(100)film(Fe-Ni)on MgO(100)substrate was realized for the first time by ion beam sputtering system.By studying its electrical transport properties with different thicknesses under an external magnetic field,the contribution and origin of the three mechanisms of skew scattering,side jump and intrinsic mechanism were separated and clarified,respectively.The results showed that the doping of Fe realized the modulation of the three mechanisms in the anomalous Hall effect.Compared with the pure single crystal Ni film,the contribution of the skew scattering mechanism is increased by the doping of Fe,the contribution of the intrinsic mechanism is decreased and the contribution of the side jump mechanism is almost not affected.The above results provide an important reference for realizing the directional regulation of the anomalous Hall effect in magnetic materials.

关 键 词：反常霍尔效应 自旋轨道耦合 斜散射机制 侧跳机制 本征机制 

分 类 号：O469[理学—凝聚态物理]