Advanced development of grain boundaries in TMDs from fundamentals to hydrogen evolution application  

在线阅读下载全文

作  者:Ziyang Yin Lingbin Xie Weinan Yin Ting Zhi Kang Chen Junan Pan Yingbo Zhang Jingwen Li Longlu Wang 

机构地区:[1]College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology),Nanjing University of Posts&Telecommunications(NJUPT),Nanjing 210023,China [2]Institute of Advanced Materials(IAM)&Institute of Flexible Electronics(Future Technology),Nanjing University of Posts&Telecommunications(NJUPT),Nanjing 210023,China

出  处:《Chinese Chemical Letters》2024年第5期117-129,共13页中国化学快报(英文版)

基  金:financially supported by the Natural Science Foundation of China(No.51902101);Natural Science Foundation of Jiangsu Province(No.BK20201381);Science Foundation of Nanjing University of Posts and Telecommunications(No.NY219144);the National College Student Innovation and Entrepreneurship Training Program(No.202210293171K).

摘  要:Grain boundary(GB),as a kind of lattice defect,widely exists in two-dimensional transition metal dichalcogenides(2D TMDs),which has complex and diverse influences on the physical/chemical properties of 2D TMDs.GBs are universally considered to be a double-edged sword,although some electrical and mechanical properties of 2D TMDs would be adversely affected leading to the reduced overall quality,certain structure-oriented applications could be realized based on its unique properties.In this review,we first detailed the atomic structure characteristics of GBs and the corresponding techniques,then we systematically summarized the methods of introducing GBs into 2D TMDs.Next,we expounded unique electrical,mechanical,and chemical properties of the GBs in 2D TMDs and clarified its internal relationship with the atomic structure.Moreover,the application of GB structure in hydrogen evolution reaction(HER)is also discussed.In the end,we make a conclusion and put forward outlooks,hoping to further promote the basic research of GB and boost the wide application of 2D TMDs.

关 键 词:Grain boundary Transition metal dichalcogenides Two-dimensional materials Hydrogen evolution reaction DISLOCATION Molybdenum disulfide 

分 类 号:TB34[一般工业技术—材料科学与工程] O643.36[理学—物理化学]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象