Near-zero-adhesion-enabled intact wafer-scale resist-transfer printing for high-fidelity nanofabrication on arbitrary substrates  

作　　者：Zhiwen Shu Bo Feng Peng Liu Lei Chen Huikang Liang Yiqin Chen Jianwu Yu Huigao Duan 

机构地区：[1]College of Mechanical and Vehicle Engineering,National Engineering Research Centre for High Efficiency Grinding,Hunan University,Changsha 410082,People’s Republic of China [2]Greater Bay Area Institute for Innovation,Hunan University,Guangzhou 511300,People’s Republic of China [3]School of Mechanical Engineering,Hunan University of Science and Technology,Xiangtan 411201,People’s Republic of China [4]Shenzhen Research Institute,Hunan University,Shenzhen 518000,People’s Republic of China

出　　处：《International Journal of Extreme Manufacturing》2024年第1期313-326,共14页极端制造（英文）

基　　金：supported by the National Key Research and Development Program of China(No.2022YFB4602600);the National Natural Science Foundation of China(No.52221001);Hunan Provincial Innovation Foundation for Postgraduate(No.CX20220406)。

摘　　要：There is an urgent need for novel processes that can integrate different functional nanostructures onto specific substrates,so as to meet the fast-growing need for broad applications in nanoelectronics,nanophotonics,and fexible optoelectronics.Existing direct-lithography methods are difficult to use on fexible,nonplanar,and biocompatible surfaces.Therefore,this fabrication is usually accomplished by nanotransfer printing.However,large-scale integration of multiscale nanostructures with unconventional substrates remains challenging because fabrication yields and quality are often limited by the resolution,uniformity,adhesivity,and integrity of the nanostructures formed by direct transfer.Here,we proposed a resist-based transfer strategy enabled by near-zero adhesion,which was achieved by molecular modification to attain a critical surface energy interval.This approach enabled the intact transfer of wafer-scale,ultrathin-resist nanofilms onto arbitrary substrates with mitigated cracking and wrinkling,thereby facilitating the in situ fabrication of nanostructures for functional devices.Applying this approach,fabrication of three-dimensional-stacked multilayer structures with enhanced functionalities,nanoplasmonic structures with~10 nm resolution,and MoS2-based devices with excellent performance was demonstrated on specific substrates.These results collectively demonstrated the high stability,reliability,and throughput of our strategy for optical and electronic device applications.

关 键 词：resist-based transfer printing near-zero adhesion critical surface energy wafer-scale nanofabrication in situ fabrication optoelectronic devices 

分 类 号：TB383.1[一般工业技术—材料科学与工程]