Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors  

作　　者：Zhiwei Xie Ke Jiang Shanli Zhang Jianwei Ben Mingrui Liu Shunpeng Lv Yang Chen Yuping Jia Xiaojuan Sun Dabing Li 

机构地区：[1]State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Dongnanhu Road No.3888,Changchun 130033,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Yuquan Road No.19,100049 Beijing,China

出　　处：《Light(Science & Applications)》2024年第4期706-716,共11页光（科学与应用)（英文版）

基　　金：the National Key R&D Program of China[2022YFB3605600];National Natural Science Foundation of China[62121005,U22A2084];Youth Innovation Promotion Association of CAS[2023223];Natural Science Foundation of Jilin Province[20230101345JC,20230101360JC,SKL202302026];Young Elite Scientist Sponsorship Program by CAST[YESS20200182].

摘　　要：With the fast development of artificial intelligence(AI),Internet of things(IOT),etc,there is an urgent need for the technology that can efficiently recognize,store and process a staggering amount of information.The AlScN material has unique advantages including immense remnant polarization,superior temperature stability and good latticematch to other III-nitrides,making it easy to integrate with the existing advanced III-nitrides material and device technologies.However,due to the large band-gap,strong coercive field,and low photo-generated carrier generation and separation efficiency,it is difficult for AlScN itself to accumulate enough photo-generated carriers at the surface/interface to induce polarization inversion,limiting its application in in-memory sensing and computing.In this work,an electro-optic duplex memristor on a GaN/AlScN hetero-structure based Schottky diode has been realized.This twoterminal memristor shows good electrical and opto-electrical nonvolatility and reconfigurability.For both electrical and opto-electrical modes,the current on/off ratio can reach the magnitude of 104,and the resistance states can be effectively reset,written and long-termly stored.Based on this device,the“IMP”truth table and the logic“False”can be successfully reproduced,indicating the huge potential of the device in the field of in-memory sensing and computing.

关 键 词：polarization DUPLEX LIMITING 

分 类 号：TN30[电子电信—物理电子学]