球磨制备硼/磷掺杂Si_(80)Ge_(20)材料及其热电性能  

Synthesis of B/P Doped Si_(80)Ge_(20) Materials by Ball Milling and Their Thermoelectric Properties

作　　者：陈啸 宋庆峰 柏胜强[2,3] CHEN Xiao;SONG Qingfeng;BAI Shengqiang(School of Physical Science and Technology,ShanghaiTech University,Shanghai 200031,China;The State Key Laboratory of High Performance Ceramics and Superfine Microstructure,Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,China;School of Materials Science and Optoelectronic Technology,University of Chinese Academy of Sciences,Beijing 100016,China)

机构地区：[1]上海科技大学物质科学与技术学院,上海200031 [2]中国科学院上海硅酸盐研究所,高性能陶瓷和超微结构国家重点实验室,上海200050 [3]中国科学院大学材料科学与光电技术学院,北京100016

出　　处：《材料导报》2024年第S01期354-358,共5页Materials Reports

基　　金：国家自然科学基金(U2141208,52102330)。

摘　　要：作为最重要的高温热电材料之一,SiGe合金的制备和性能优化一直备受关注。本工作利用机械合金化结合放电等离子烧结技术成功制备了B和P掺杂的Si_(80)Ge_(20)合金,并利用X射线衍射技术、电子扫描显微镜结合能谱仪技术对样品的物相进行分析表征,重点研究了B和P掺杂对Si_(80)Ge_(20)合金的电热输运性能影响。研究表明,B和P掺杂可有效优化材料载流子浓度,提升材料的电学性能;B掺杂能有效增强声子散射降低材料晶格热导率,因为电学性能的提升和热导率的降低,在1000 K时,Si_(80)Ge_(20)+2.0vol%B样品的zT值约达到1.01;不同含量P掺杂样品的zT值在整个测试温度范围内基本维持不变,在1000 K时,Si_(80)Ge_(20)+2.0vol%P样品的zT值约为1.16。As one of the most important high-temperature thermoelectric materials,the synthesis and performance optimization of SiGe alloys have always attracted attention for decades.In this work,B-and P-doped Si_(80)Ge_(20) alloy were successfully prepared using mechanical alloying and spark plasma sintering technology.Then,the phases of the samples were analyzed and characterized by X-ray diffraction(XRD),electron scanning microscopy-energy dispersive spectroscopy(SEM-EDS).Consequently,the effect of B and P doping on the thermoelectric performance of Si_(80)Ge_(20) alloy were investigated.It’s found that B and P doping can effectively optimize the carrier concentration and improve their electrical properties.B-doping can effectively enhance phonon scattering and reduce the lattice thermal conductivity.Due to the improvement of electrical properties and reduction of thermal conductivity,the zT of Si_(80)Ge_(20)+2.0vol%B sample reaches~1.01 at 1000 K.While,the zT s of P-doped samples remain basically unchanged throughout the entire measured temperature range attributed to the increase in thermal conductivity.The zT of Si_(80)Ge_(20)+2.0vol%P sample is about 1.16 at 1000 K.

关 键 词：硅锗合金 热电材料 晶格热导 机械合金化 

分 类 号：TK01[动力工程及工程热物理]