NMOS晶体管电荷共享导致的SRAM单元单粒子翻转恢复效应研究  

Research on single event upset recovery effect of SRAM cell induced by charge sharing in NMOS transistors

作　　者：高珊[1,2] 李洋 郝礼才[1,2] 赵强 彭春雨 蔺智挺[1,2] 吴秀龙 GAO Shan;LI Yang;HAO Li-cai;ZHAO Qiang;PENG Chun-yu;LIN Zhi-ting;WU Xiu-long(School of Integrated Circuits,Anhui University;Anhui Provincial High-Performance Integrated Circuit Engineering Research Center)

机构地区：[1]安徽大学,集成电路学院 [2]安徽省高性能集成电路工程研究中心

出　　处：《中国集成电路》2024年第6期48-55,共8页China lntegrated Circuit

基　　金：国家自然科学基金(62274001);国家自然科学基金(62104002);安徽省省高校科研重点项目(2023AH040011);安徽省重点研发项目(2022a05020044);国家自然科学基金(62104001)。

摘　　要：基于Synopsys公司的三维器件模拟软件TCAD,本文研究了NMOS晶体管电荷共享导致SRAM单元的单粒子翻转恢复(SEUR)效应。分析了NMOS晶体管电荷共享导致SEUR效应的物理机制,系统研究了NMOS晶体管偏置(如电源电压、P阱偏置电压)和工艺参数(如P+深阱掺杂浓度、P阱接触距离)对线性能量传输翻转恢复阈值(LETrec)以及单粒子翻转脉冲宽度(PWrec)的影响。研究发现:PWrec随着电源电压的增大而增大;PWrec和LETrec随着P阱偏置电压的增大而减小;LETrec随着P+深阱掺杂浓度的增大而增大;PWrec随着P阱接触与NMOS晶体管之间距离的增大而增大,而LETrec随着P阱接触与NMOS晶体管之间距离增大而减小。本文研究结论有助于优化SRAM单元抗单粒子效应设计,尤其是基于SEUR效应的SRAM单元的抗辐照加固设计提供了理论指导。Based on Synopsys company's 3D device simulation software TCAD,this paper investigates the single event upset recovery(SEUR)effect of SRAM cell caused by charge sharing in NMOS transistors.The physical mechanism of charge sharing in NMOS transistors leading to the SEUR effect,and the effects of NMOS transistor bias(such as power supply voltage,P-well bias voltage)and process parameters(such as P+deep well doping concentra-tion,P-well contact distance)on the linear energy transfer inversion recovery threshold(LETrec)and single particle inversion pulse width(PWrec)were systematically studied.Research has found that PWrec increases with the in-crease of power supply voltage;PWrec and LETrec decrease with increasing P-well bias voltage;The LETrec increas-es with the increase of P+deep well doping concentration;PWrec increases as the distance between P-well contact and NMOS transistor increases,while LETrec decreases as the distance between P-well contact and NMOS transistor increases.The research conclusion of this article is helpful for optimizing the design of SRAM units against single event effects,especially providing theoretical guidance for the radiation reinforcement design of SRAM cell based on the SEUR effect.

关 键 词：单粒子翻转恢复效应 SRAM 电荷共享 工艺参数 

分 类 号：TN432[电子电信—微电子学与固体电子学]