Au-Al键合界面金属间化合物对可靠性影响的研究  

Research on the Reliability Effect Caused by IMC at Au-Al Bonding Interface

作　　者：张健健 吴超 陶少杰 ZHANG Jian-jian;WU Chao;TAO Shao-jie(Unimos Microelectronics(Shanghai)Co.,Ltd.)

机构地区：[1]宏茂微电子(上海)有限公司

出　　处：《中国集成电路》2024年第6期82-89,共8页China lntegrated Circuit

摘　　要：引线键合工艺是半导体封装过程中十分重要的一道工序,键合质量的提高基于键合可靠性的提升,而键合界面对键合的可靠性,乃至对电子元器件的服役性能和使用寿命都有着极大的影响。但是,在键合完成初期,由于会形成少量的金属间化合物(IMC)。而且,随着时间的增加和温度的升高,金属间化合物会增加。金属间化合物过多时易导致键合强度降低、变脆,以及接触电阻变大等问题,应该看到,脆性的金属间化合物会使键合点在受周期性应力作用时引发疲劳破坏,最终可导致器件开路或器件的电性能退化。其中,金属间化合物的形成和可肯达尔(Kirkendall)空洞是金铝(Au-Al)键合失效的主要失效机理。本文结合充分的实验测试数据及相关文献,综述键合界面上金属间化合物的形成以及演变机理,并且从不同种类的金线、芯片焊盘的铝层厚度、不同焊线的模式、不同类型的封装树脂,四个方面探讨键合界面金属间化合物对可靠性的影响。The wire bonding process is a very important process in semiconductor packaging manufacturing,and the improvement of bonding quality is based on the improvement of bonding reliability.The bonding interface has a great impact on the reliability of bonding,and even on the service performance and usage life of electronic components.In the early stage of bonding,a small amount of intermetallic compounds(IMCs)will be formed.As time and temperature increase,intermetallic compounds will increase.Excessive intermetallic compounds can lead to a decrease in bonding strength,embrittlement,and increased contact resistance.Brittle intermetallic compounds can cause fatigue damage to the bonding point under periodic stress,ultimately leading to device open failure or electrical performance degradation.The formation of intermetallic compounds and Kirkendall voids are the main failure mechanisms of Au-Al bonding failure.This article combines a sufficient amount of experimental test data and relevant literature to review the formation and evolution mechanism of intermetallic compounds at bonding interfaces.It also explores the influence of intermetallic compounds at bonding interfaces on reliability from four aspects:different types of gold wires,Al layer thickness of chip pads,different wire bonding modes,and different types of epoxy molding compound.

关 键 词：Au-Al键合界面 金属间化合物 Kirkendall空洞 高温储存实验 键合模式 

分 类 号：TN405[电子电信—微电子学与固体电子学]