Reanalysis of energy band structure in the type-II quantum wells  

作　　者：李欣欣 邓震 江洋 杜春花 贾海强 王文新 陈弘 Xinxin Li;Zhen Deng;Yang Jiang;Chunhua Du;Haiqiang Jia;Wenxin Wang;Hong Chen(Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Center of Materials and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;The Yangtze River Delta Physics Research Center,Liyang 213000,China;Songshan Lake Materials Laboratory,Dongguan 523808,China)

机构地区：[1]Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]Center of Materials and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]The Yangtze River Delta Physics Research Center,Liyang 213000,China [4]Songshan Lake Materials Laboratory,Dongguan 523808,China

出　　处：《Chinese Physics B》2024年第6期75-78,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 61991441 and 62004218);the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB01000000);Youth Innovation Promotion Association Chinese Academy of Sciences (Grant No. 2021005)。

摘　　要：Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures, the energy of carriers in the well splits into discrete energy levels due to the confinement of barriers in the growth direction. However, the discrete energy levels obtained at a fixed wave vector cannot accurately reflect the actual energy band structure. In this work, the band structure of the type-II quantum wells is reanalyzed. When the wave vectors of the entire Brillouin region(corresponding to the growth direction) are taken into account, the quantized energy levels of the carriers in the well are replaced by subbands with certain energy distributions. This new understanding of the energy bands of low-dimensional structures not only helps us to have a deeper cognition of the structure, but also may overturn many viewpoints in traditional band theories and serve as supplementary to the band theory of low-dimensional systems.

关 键 词：energy band structure type-II quantum wells low-dimensional semiconductors 

分 类 号：O469[理学—凝聚态物理]