Observing ferroelastic switching in Hf_(0.5)Zr_(0.5)O_(2) thin film  

作　　者：关赵 王陶 郑赟喆 彭悦 魏鹿奇 张宇科 阿卜力孜·麦提图尔荪 黄家豪 童文旖 韩根全 陈斌斌 向平华 段纯刚 钟妮 Zhao Guan;Tao Wang;Yunzhe Zheng;Yue Peng;Luqi Wei;Yuke Zhang;Abliz Mattursun;Jiahao Huang;Wen-Yi Tong;Genquan Han;Binbin Chen;Ping-Hua Xiang;Chun-Gang Duan;Ni Zhong(Key Laboratory of Polar Materials and Devices,Ministry of Education,Shanghai Center of Brain-inspired Intelligent Materials and Devices,East China Normal University,Shanghai 200241,China;School of Microelectronics,Xidian University,Xi'an 710071,China;Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China)

机构地区：[1]Key Laboratory of Polar Materials and Devices,Ministry of Education,Shanghai Center of Brain-inspired Intelligent Materials and Devices,East China Normal University,Shanghai 200241,China [2]School of Microelectronics,Xidian University,Xi'an 710071,China [3]Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China

出　　处：《Chinese Physics B》2024年第6期526-530,共5页中国物理B（英文版）

基　　金：Project supported by the the National Key Research and Development Program of China (Grant No. 2022YFA1402902);the National Natural Science Foundation of China (Grant Nos. 12074119, 12204171, 12134003, and 12374145);the Chenguang Program Foundation of Shanghai Education Development Foundation and Shanghai Municipal Education Commission, ECNU (East China Normal University) Multifunctional Platform for Innovation (006);the Fundamental Research Funds for the Central Universities。

摘　　要：Hafnium zirconium oxides(HZO),which exhibit ferroelectric properties,are promising materials for nanoscale device fabrication due to their high complementary metal-oxide-semiconductor(CMOS) compatibility.In addition to piezoelectricity,ferroelectricity,and flexoelectricity,this study reports the observation of ferroelasticity using piezoelectric force microscopy(PFM) and scanning transmission electron microscopy(STEM).The dynamics of 90° ferroelastic domains in HZO thin films are investigated under the influence of an electric field.Switching of the retentive domains is observed through repeated wake-up measurements.This study presents a possibility of enhancing polarization in HZO thin films during wake-up processes.

关 键 词：HfO_(2)-based ferroelectrics FERROELASTICITY piezoelectric force microscopy(PFM) 

分 类 号：O469[理学—凝聚态物理]