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作 者:李明慧 高仁宏 黎春桃 管江林 张海粟 林锦添 赵光辉 乔迁 汪旻 乔玲玲 邓莉 程亚 Minghui Li;Renhong Gao;Chuntao Li;Jianglin Guan;Haisu Zhang;Jintian Lin;Guanghui Zhao;Qian Qiao;Min Wang;Lingling Qiao;Li Deng;Ya Cheng(State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science,Shanghai Institute of Optics and Fine Mechanics(SIOM],Chinese Academy of Sciences(CAS],Shanghai 201800,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;XXL—The Extreme Optoelectromechanics Laboratory,School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China;State Key Laboratory of Precision Spectroscopy,East China Normal University,Shanghai 200062,China;School of Physical Science and Technology,ShanghaiTech University,Shanghai 200031,China;Shanghai Research Center for Quantum Sciences,Shanghai 201315,China;Hefei National Laboratory,Hefei 230088,China)
机构地区:[1]State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science,Shanghai Institute of Optics and Fine Mechanics(SIOM],Chinese Academy of Sciences(CAS),Shanghai 201800,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]XXL—The Extreme Optoelectromechanics Laboratory,School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China [4]State Key Laboratory of Precision Spectroscopy,East China Normal University,Shanghai 200062,China [5]School of Physical Science and Technology,Shanghai Tech University,Shanghai 200031,China [6]Shanghai Research Center for Quantum Sciences,Shanghai 201315,China [7]Hefei National Laboratory,Hefei 230088,China
出 处:《Chinese Optics Letters》2024年第4期48-52,共5页中国光学快报(英文版)
基 金:supported by the National Key R&D Program of China(Nos.2019YFA0705000,2022YFA1404600,and 2022YFA1205100);the National Natural Science Foundation of China(NSFC)(Nos.62122079,12192251,62235019,12334014,12134001,12104159,and 11933005);the Innovation Program for Quantum Science and Technology(No.2021ZD0301403);the Shanghai Municipal Science and Technology Major Project(No.2019SHZDZX01);the Science and Technology Commission of Shanghai Municipality(Nos.21DZ1101500 and 23ZR1481800);the Youth Innovation Promotion Association of Chinese Academy of Sciences(No.2020249);the Engineering Research Center for Nanophotonics&Advanced Instrument,Ministry of Education,East China Normal University(No.2023nmc005)。
摘 要:We demonstrate single-mode microdisk lasers in the telecom band with ultralow thresholds on erbium-ytterbium co-doped thin-film lithium niobate(TFLN).The active microdisk was fabricated with high-Q factors by photolithography-assisted chemomechanical etching.Thanks to the erbium-ytterbium co-doping providing high optical gain,the ultralow loss nanostructuring,and the excitation of high-Q coherent polygon modes,which suppresses multimode lasing and allows high spatial mode overlap between pump and lasing modes,single-mode laser emission operating at 1530 nm wavelength was observed with an ultralow threshold,under a 980-nm-band optical pump.The threshold was measured as low as 1μW,which is one order of magnitude smaller than the best results previously reported in single-mode active TFLN microlasers.The conversion efficiency reaches 4.06×10^(-3),which is also the highest value reported in single-mode active TFLN microlasers.
关 键 词:lithium niobate MICROCAVITIES microdisk lasers
分 类 号:TN248[电子电信—物理电子学]
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