功率器件封装用Cu-Sn全IMC接头制备及其可靠性研究进展  

Research Progress in Preparation and Reliability of Cu-Sn Full IMC Joints for Power Device Packaging

作　　者：胡虎安 贾强 王乙舒[1] 籍晓亮 邹贵生 郭福[1,4] HU Hu’an;JIA Qiang;WANG Yishu;JI Xiaoliang;ZOU Guisheng;GUO Fu(School of Materials Science and Engineering,Beijing University of Technology,Beijing 100124,China;Chongqing Research Institute,Beijing University of Technology,Chongqing 400015,China;Department of Mechanical Engineering,Tsinghua University,Beijing 100084,China;School of Mechanical and Electrical Engineering,Beijing Information Science and Technology University,Beijing 100096,China)

机构地区：[1]北京工业大学材料科学与工程学院,北京100124 [2]北京工业大学重庆研究院,重庆400015 [3]清华大学机械工程系,北京100084 [4]北京信息科技大学机电工程学院,北京100096

出　　处：《电源学报》2024年第3期62-71,共10页Journal of Power Supply

基　　金：重庆市自然科学基金资助项目(CSTB2023NSCQ-MSX0187);北京市自然科学基金-小米创新联合基金资助项目(L233038)。

摘　　要：随着功率半导体器件的服役环境越来越恶劣,以碳化硅(SiC)为代表的第三代半导体凭借其优异的高温性能成为行业应用主流。但目前尚缺乏与之相匹配的低成本、耐高温的互连材料,成为了制约行业发展的瓶颈。Cu-Sn全金属间化合物(IMC)因其成本低、导电性好且满足低温连接、高温服役的特点被认为是理想的SiC芯片互连材料之一。针对功率半导体器件封装,对国内外近年来Cu-Sn全IMC接头的制备方法和可靠性进行了分析和综述,并讨论了目前亟待解决的问题和未来的发展趋势。As the service environment of power semiconductor devices becomes more and more severe,the third-generation semiconductor represented by silicon carbide(SiC)has become the mainstream of industry applications owing to its excellent high-temperature performance.However,the lack of bounding materials which not only match with SiC chips but also have a low cost and a high melting point has become a bottleneck in the development of the industry.Cu-Sn intermetallic compounds(IMCs)are considered to be ideal bounding materials for SiC chips because of their low cost,good conductivity and characteristics that meet the requirements of low-temperature bonding and high-temperature service.Aimed at the power semiconductor device packaging,the preparation and reliability of Cu-Sn full IMC joints at home and abroad in recent years are analyzed and reviewed,and the problems to be solved at present and the development trend in the future are discussed.

关 键 词：功率器件封装 全金属间化合物 制备工艺 可靠性 

分 类 号：TM241.2[一般工业技术—材料科学与工程]