采用大芯片的高功率密度SiC功率模块设计  

Design of High Power Density SiC Power Module with Large Chips

作　　者：李东润 宁圃奇[1,2,6] 康玉慧 范涛 雷光寅[3,4] 史文华 LI Dongrun;NING Puqi;KANG Yuhui;FAN Tao;LEI Guangyin;SHI Wenhua(Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China;Institute of Future Lighting,Academy for Engineering&Technology,Fudan University,Shanghai 200433,China;Research Institute of Fudan University in Ningbo,Ningbo 315327,China;SiChain Semiconductors,Ningbo 315226,China;CPSS)

机构地区：[1]中国科学院电工研究所,北京100190 [2]中国科学院大学,北京100049 [3]复旦大学工程与应用技术研究院超越照明所,上海200433 [4]复旦大学宁波研究院,宁波315327 [5]清纯半导体(宁波)有限公司,宁波315226 [6]中国电源学会

出　　处：《电源学报》2024年第3期93-99,共7页Journal of Power Supply

基　　金：国家重点研发计划资助项目(2021YFB2500600);中国科学院青年交叉团队资助项目(JCTD-2021-09)。

摘　　要：碳化硅SiC(silicon carbide)器件具备耐高压、低损耗和高热导率等优势,对电动汽车行业发展具有重要意义。提出一种利用大芯片封装的SiC MOSFET功率模块设计,并开展实验分析模块的电气性能;搭建仿真对仅有电特性与电特性和温度负反馈结合这2种情况下模块温度进行对比研究。仿真结果表明,在相同工作条件下,采用大芯片封装设计的SiC MOSFET功率模块导通电流能力更强,温度变化更小,电气性能有所提升。Silicon carbide(SiC)devices possess advantages such as high voltage resistance,low losses and high thermal conductivity,making them of significant importance for the development of the electric vehicle industry.A design for a SiC MOSFET power module utilizing large-chip packaging was proposed,and experiments were conducted to analyze the module’s electrical performance.Simulations were set up to compare the module temperature under two conditions,i.e.,electrical characteristics only and a combination of electrical characteristics and temperature feedback.Simulation results indicate that under identical operating conditions,the SiC MOSFET power module designed with large-chip packaging exhibited stronger conduction current capability,smaller temperature variations and improved electrical performance.

关 键 词：电动汽车 功率密度 碳化硅芯片 功率模块 封装 

分 类 号：TM571[电气工程—电器]