动态高温反偏应力下的SiC MOSFET测试平台及其退化机理研究  

Test Platform and Degradation Mechanism of SiC MOSFET under Dynamic High-temperature Reverse Bias Stress

作　　者：左璐巍 辛振 蒙慧 周泽 余彬 罗皓泽[2,4] ZUO Luwei;XIN Zhen;MENG Hui;ZHOU Ze;YU Bin;LUO Haoze(State Key Laboratory of Reliability and Intelligence of Electrical Equipment,Hebei University of Technology,Tianjin 300401,China;School of Electrical Engineering,Zhejiang University,Hangzhou 310058,China;School of Automation,Nanjing University of Information Science and Technology,Nanjing 210044,China;CPSS)

机构地区：[1]河北工业大学省部共建电工装备可靠性与智能化国家重点实验室,天津300401 [2]浙江大学电气工程学院,杭州310058 [3]南京信息工程大学自动化学院,南京210044 [4]中国电源学会

出　　处：《电源学报》2024年第3期211-219,共9页Journal of Power Supply

摘　　要：为研究SiC MOSFET在动态漏源应力下的退化机理,开发了一种具有dVds/dt可调功能、最高可达80 V/ns的动态反向偏置测试平台。针对商用SiC MOSFET进行动态高温反偏实验,讨论高电压变化率的动态漏源应力对SiC MOSFET电学特性的影响。实验结果显示,器件的阈值电压和体二极管正向导通电压增加,说明器件JFET区上方的栅氧层和体二极管可能发生了退化。通过Sentaurus TCAD分析了在高漏源电压及高电压变化率下平面栅型SiC MOSFET的薄弱位置,在栅氧层交界处和体二极管区域设置了空穴陷阱,模拟动态高温反偏对SiC MOSFET动静态参数的影响。To study the degradation mechanism of silicon carbide metal-oxide-semiconductor field effect transistors(SiC MOSFETs)under dynamic drain-source stress,a dynamic reverse bias test platform with an adjustable dVds/dt capability up to 80 V/ns was developed.A dynamic high-temperature reverse bias test of commercial SiC MOSFET was carried out,and the effect of dynamic drain-source stress with a high voltage change rate on the electrical characteristics of SiC MOSFET was discussed.Experimental results show that the threshold voltage and forward conduction voltage of the bulk diode increased,indicating that the gate oxygen layer and the bulk diode above the JFET region of the device may be degraded.Sentaurus TCAD was used to analyze the weak position of plane-gate SiC MOSFET under high drain-source voltage and a high voltage change rate,and hole traps were set at the gate oxygen layer junction and the body diode region to simulate the effect of dynamic high-temperature reverse bias on the dynamic and static parameters of SiC MOSFET.

关 键 词：动态高温反偏测试 退化机理 SiC MOSFET 可调dV_(ds)/dt 

分 类 号：TN386.1[电子电信—物理电子学]