低远场发散角976 nm基横模脊形半导体激光器  

976 nm Fundamental Transverse Mode Ridge Diode Laser with Narrow Far-Field Divergence Angle

作　　者：王振诺 仲莉[1,2] 张德帅 刘素平 潘智鹏[1,2] 常津源 何天将 马骁宇 Wang Zhennuo;Zhong Li;Zhang Deshuail;Liu Suping;Pan Zhipeng;Chang Jinyuan;He Tianjiang;Ma Xiaoyu(National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所光电子器件国家工程研究中心,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《光学学报》2024年第8期132-138,共7页Acta Optica Sinica

摘　　要：采用非对称大光腔外延结构设计制备出976 nm InGaAs/GaAsP应变补偿量子阱脊形半导体激光器,通过对外延结构的设计优化,以实现器件低远场发散角、低功耗的基横模稳定输出。所制备基横模脊形半导体激光器的脊宽为5μm、腔长为1500μm,在25℃测试温度下,可获得422 mW最大连续输出功率,峰值波长为973.3 nm,光谱线宽(FWHM)为1.4 nm。当注入电流为500 mA时,垂直和水平远场发散角(FWHM)分别为24.15°和3.90°。在15~35℃测试温度范围内对脊形半导体激光器的水平远场发散角进行测试分析,发现随着测试温度的升高,器件远场分布变化较小,水平远场发散角基本维持在3.9°左右。Objective As the main pumping light source of solid state laser,fiber laser,and fiber amplifier,976 nm diode laser has been widely used in industrial processing,medical treatment,communication,and other fields.As an important pumping light source of erbium-doped fiber amplifier,a 976 nm fundamental transverse mode diode laser can achieve high-efficiency coupling with fiber,improve the output performance of the fiber amplifier,and effectively reduce the cost of the fiber amplifier.It plays a very important role in improving the application of erbium-doped fiber amplifier in fiber communication and other fields.However,since the ridge waveguide in the ridge diode laser uses the weak refractive index guiding mechanism to suppress the higher-order transverse mode,it will be greatly affected by the lateral diffusion of carriers and the self-heating effect and eventually lead to the decline of the ridge waveguide mode guiding and the increase of the farfield angle.To further improve the coupling efficiency of diode lasers in fiber laser pumping applications and reduce the application cost of fiber lasers,it is still important to realize low far-field divergence angle and low power consumption of fundamental transverse mode ridge diode lasers.Methods Using InGaAs/GaAsP material as the strain-compensated quantum well structure,and GaAsP with high bandgap width as the barrier material can effectively reduce the carrier leakage effect of quantum well,provide strain compensation for InGaAs compressive strain quantum well,and improve the epitaxial growth quality.To achieve low loss,we optimize high output optical power and low far-field angle,the thickness of waveguide layers by using asymmetric large optical cavity epitaxial structure.The doping concentrations of the epitaxial layer materials are optimized to reduce the series resistance of the device,to achieve high power,high conversion efficiency,and low far-field output of the ridge diode laser.To achieve fundamental transverse mode output,we use the effective refractiv

关 键 词：激光器 976 nm半导体激光器 基横模脊形波导 低远场发散角 非对称大光腔结构 

分 类 号：TN248.4[电子电信—物理电子学]