High-performance,low-power,and flexible ultraviolet photodetector based on crossed ZnO microwires p-n homojunction  

作　　者：SHULIN SHA KAI TANG MAOSHENG LIU PENG WAN CHENYANG ZHU DANING SHI CAIXIA KAN MINGMING JIANG 

机构地区：[1]College of Physics,MIIT Key Laboratory of Aerospace Information Materials and Physics,Key Laboratory for Intelligent Nano Materials and Devices,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China

出　　处：《Photonics Research》2024年第4期648-662,共15页光子学研究（英文版）

基　　金：Postgraduate Research&Practice Innovation Program of Jiangsu Province(KYCX23_0348);Funding for Outstanding Doctoral Dissertation in Nanjing University of Aeronautics and Astronautics(BCXJ22-14);Fundamental Research Funds for the Central Universities(NC2022008);National Natural Science Foundation of China(11974182,12374257)。

摘　　要：Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples of ZnO microwires having p-type(Sb-doped ZnO, ZnO:Sb) and n-type(Ga-doped ZnO, ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p-n homojunction vertical structure photodiode involving a single ZnO:Sb microwire crossed with a ZnO:Ga microwire, which can detect ultraviolet light signals, was constructed.

关 键 词：power ULTRAVIOLET conduction 

分 类 号：TN36[电子电信—物理电子学]